TT8J21TR Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The TT8J21TR, also known as a power MOSFET array is a power semiconductor device that plays an important role in a wide range of applications. It is characterized by a high breakdown voltage and an extremely low on-resistance. It also has an extremely high switching frequency, making it suitable for use in megawatt-level power systems. The TT8J21TR is a type of power MOSFET array, which consists of two transistors in a single package. Both transistors are connected in series, forming an integrated circuit. This makes the device extremely efficient and reliable, as well as cost-effective.

The array is commonly used in various power switching applications such as AC/DC voltage regulation, switching power supplies, and DC motors. Due to its low on-resistance, it can be used in high-power switching applications such as motor and light dimming control, LED lighting systems, lighting control, and solar inverters. The TT8J21TR also has other applications such as power factor correction, and in fuel cell power converters.

The TT8J21TR power MOSFET array has an extremely low on-resistance, which is one of its main characteristics. This low on-resistance allows it to efficiently switch high currents and voltages with minimal power losses. As a result, the device produces lower losses when used in high-power switching applications, making it more efficient and reliable.

Another characteristic of the TT8J21TR is its excellent thermal properties. It has a very low thermal impedance, due to its efficient heat dissipation capabilities. As a result, the device can handle higher power levels without generating too much heat. This makes it an ideal choice for applications that require reliable power in high temperatures.

The TT8J21TR has an extremely high switching frequency, which makes it suitable for use in megawatt-level power systems. It can switch signals at frequencies up to 3500MHz and has a low gate charge. This gate charge represents the amount of energy needed to open or close the device’s gate. Low gate charge means that the device requires less power to operate efficiently.

The TT8J21TR is a reliable and cost-effective power MOSFET array. It can efficiently handle high currents and voltages, allowing it to be used in high-power switching applications. Its excellent thermal properties and high switching frequency make it suitable for applications needing reliable power in high temperatures. With its low on-resistance, low gate charge, and excellent thermal properties, the TT8J21TR is a reliable and cost-effective choice for high-power switching applications.

The specific data is subject to PDF, and the above content is for reference