TT8J1TR

FET Type:	2 P-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	12V
Current - Continuous Drain (Id) @ 25°C:	2.5A
Rds On (Max) @ Id, Vgs:	61 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	1350pF @ 6V
Power - Max:	1.25W
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SMD, Flat Lead
Supplier Device Package:	8-TSST
Base Part Number:	*J1
Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete

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<p>The recently developed silicon-based transistors, known as the TT8J1TR model transistor, have made a huge impact on the industrial and commercial electronics markets. The TT8J1TR model, produced by a British company, is one of the most advanced, reliable, and long-lasting transistors on the market today, and is perfect for a variety of applications. This article will cover the basic application field and working principle of the TT8J1TR model transistor, and will provide a brief overview of the different types of transistors, as well as discuss how the TT8J1TR model functions in its various applications.</p><p>The TT8J1TR model transistor belongs to the family of Field Effect Transistors (FETs). FETs are a type of transistor which uses an electric field to control the current flow between the source and the drain. FETs are used in a variety of applications, including industrial electronics and automotive systems. FETs are also used in computers and digital circuits, microprocessors, and digital logic circuits.</p><p>Within the family of FETs, the TT8J1TR is an MOSFET. MOSFETs are metal-oxide-silicon FETs which are composed of a metal-oxide semiconductor material as the lower portion of the FET and a silicon substrate as the upper portion. MOSFETs are widely used in integrated circuits where a high degree of integration is required. The advantage of MOSFETs over other types of transistors is that they are electrically simpler and can accommodate higher current ratings.</p><p>MOSFETs can also be arranged into arrays. An array of MOSFET transistors provides the most efficient and cost-effective way of controlling large amounts of current. Each individual FET in the array is controlled separately, allowing for precise control of the power flow. The TT8J1TR model transistor is well suited for this type of application, as it has a large current carrying capacity, high efficiency, and a robust design.</p><p>The working principle of the TT8J1TR model transistor is based on the operation of its metal-oxide semiconductor structure. When a voltage is applied to the metal-oxide, electrons become excited and move from the metal to the oxide. This creates an electric field which in turn controls the current flow from the source to the drain. The TT8J1TR model also features a low threshold voltage which allows for increased control of the current flow.</p><p>The TT8J1TR model is widely used in a variety of applications, from industrial and automotive to consumer electronics. In the industrial sector, the TT8J1TR model can be used to control large currents for power supply circuits, motors, and lighting systems. The TT8J1TR is also used to regulate the voltage and current in low-cost consumer electronics such as digital thermostats and smoke detectors.</p><p>In summary, the TT8J1TR model transistor is one of the most versatile transistors available on the market today, and has a wide range of applications. It belongs to the family of Field Effect Transistors and is an advanced MOSFET which can be arranged into an array for efficient current control. It has a low threshold voltage, allowing for precise voltage and current control, and is perfect for applications requiring a high degree of integration.</p>

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