TT8J13TCR Discrete Semiconductor Products |
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Allicdata Part #: | TT8J13TCRTR-ND |
Manufacturer Part#: |
TT8J13TCR |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET 2P-CH 12V 2.5A TSST8 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 12V 2.5A 1W Surfac... |
DataSheet: | TT8J13TCR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.09325 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate, 1.5V Drive |
Drain to Source Voltage (Vdss): | 12V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A |
Rds On (Max) @ Id, Vgs: | 62 mOhm @ 2.5A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 6V |
Power - Max: | 1W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | 8-TSST |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The TT8J13TCR is a high-efficiency Trench transistor matrix that can offer superior performance for numerous applications. It provides a versatile, low-power solution to multiple needs, with two separate drains and two separate sources.
The TT8J13TCR is a 2x2 matrix transistor array, meaning that it contains four individual FETs (transistors). Each semiconductor device in the matrix has an independent gate, making it an ideal solution for high-density, high-current applications. It is commonly used in applications such as communications and telecommunications, industrial automation, automotive, power management, and medical instrumentation.
The TT8J13TCR provides superior power handling capability, with a peak power dissipation of up to 10 watts. It also has high switching speed, with transition times as fast as 8ns, making it suitable for PWM (pulse-width modulation) applications. Additionally, it features a wide voltage range, from 6V to 30V, allowing for higher efficiency and lower power consumption for applications.
The TT8J13TCR also features an exceptional ESD (electrostatic discharge) protection, which makes it ideal for applications that require reliable performance in tough industrial environments. This includes automotive applications, where the device must be able to withstand shocks, vibrations, and high-pressure fluctuations.
In terms of working principle, the TT8J13TCR is based on DC-to-DC technology. This means that current is transferred from the gate to the source or vice versa, depending on the bias voltage. When a gate is biased, the FETs’ source is turned off and the drain is turned on, resulting in a low-impedance connection between the two nodes. This makes it perfect for applications that require high-density power handling.
The TT8J13TCR also offers superior performance in terms of on-state current and off-state leakage current. Additionally, the device offers low output capacitance, with a typical value of 0.1pF. This makes it ideal for communication applications that require ultrafast switching response.
Overall, the TT8J13TCR is an ideal solution for applications that require high current, fast switching speeds, high reliability, and low-power consumption. It is a great choice for power management, industrial automation, communication, and medical instrumentation.
The specific data is subject to PDF, and the above content is for reference
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