TZMB12-GS08 Allicdata Electronics

TZMB12-GS08 Discrete Semiconductor Products

Allicdata Part #:

TZMB12-GS08GITR-ND

Manufacturer Part#:

TZMB12-GS08

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 12V 500MW SOD80
More Detail: Zener Diode 12V 500mW ±2% Surface Mount SOD-80 Min...
DataSheet: TZMB12-GS08 datasheetTZMB12-GS08 Datasheet/PDF
Quantity: 10000
Stock 10000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 12V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 20 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 9.1V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Base Part Number: TZMB12
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes, in general, are electronic devices that are used to control the direction of electron flow. A Zener diode, in particular, is a type of diode that is designed to conduct only when the reverse bias voltage applied to its terminals reaches the breakdown voltage. It has a low resistance in one direction and a high resistance in the opposite direction, effectively allowing current to flow only in one direction.

The TZMB12-GS08 is a single Zener diode that is specially designed to operate in a wide range of applications. This includes automotive, communication, power supplies, switches and rectifiers. Its key features include its low forward voltage drop, high reverse breakdown voltage and low thermal resistance. This makes it an ideal choice for use in a variety of circuits.

The device consists of a P-type semiconductor material, which is heavily doped to form a junction with an N-type layer. A small amount of voltage applied to this junction will cause it to become forward bias, allowing current to flow from the P region to the N region. However, when the reverse bias voltage is increased beyond a certain point, the junction breakdown and current begins to flow in the reverse direction. This phenomenon is known as the Zener breakdown voltage, and is characteristic of Zener diodes.

The working principle of the TZMB12-GS08 is relatively simple. When it is used in a reverse-biased circuit, it will conduct when the applied voltage exceeds its breakdown voltage. In this state, it will reduce the voltage across itself and will return a certain amount of current. This is useful in applications such as voltage regulation, over-voltage protection, and rectifier bridges.

In summary, the TZMB12-GS08 is a single Zener diode that is designed to operate in a wide variety of applications. Its key features include its low forward voltage drop, high reverse breakdown voltage and low thermal resistance. It works by conducting current when the reverse bias voltage applied to its terminals reaches the breakdown voltage. This makes it an ideal choice for use in a variety of circuits.

The specific data is subject to PDF, and the above content is for reference

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