TZMB16-GS08 Allicdata Electronics

TZMB16-GS08 Discrete Semiconductor Products

Allicdata Part #:

TZMB16-GS08GITR-ND

Manufacturer Part#:

TZMB16-GS08

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 16V 500MW SOD80
More Detail: Zener Diode 16V 500mW ±2% Surface Mount SOD-80 Min...
DataSheet: TZMB16-GS08 datasheetTZMB16-GS08 Datasheet/PDF
Quantity: 10000
Stock 10000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 16V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 40 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 12V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Base Part Number: TZMB16
Description

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The TZMB16-GS08 is a single Zener diode which is designed to provide efficient and reliable performance in a wide range of applications. It features a highly reliable NPN silicon epitaxial planar diffused structure, specially designed for noise suppression and EMI reduction in switching communications applications. It is capable of providing a stable noise level, without the need for external components.

The TZMB16-GS08 is constructed of a P-type substrate with an N-type emitter and collector. Its metal gate and diaphragm are designed to minimize losses and limit reverse current. The diode is optically isolated, to either cathode or anode, and has a wide forward breakdown voltage and a low reverse leakage current.

The primary application of the TZMB16-GS08 is in RF high-frequency applications such as cellular phones, Bluetooth devices, Wi-Fi devices and other communications applications. The diode is also used in EMI/RFI suppression filters and in power supply ripple noise reduction. It is also used in switching, relay and high-speed logic applications.

The TZMB16-GS08 is highly efficient and reliable, with a high thermal resistance and an excellent reverse leakage current. It is rated for a reverse voltage of 16V and a maximum forward voltage of 8V. It is also rated for a reverse leakage current of 10 mA and a maximum forward current of 20 mA.

The working principle of the TZMB16-GS08 is simple; when forwardly biased, its n-type treatment meanders electrons from its anode (positive terminal) to its cathode (negative terminal). When reversely biased, a built-in potential barrier protects the device from any further current flow. The Zener junction of the diode allows a controlled reverse current to pass through the diode when the voltage is greater than the Zener voltage, and as a result creates a voltage regulator circuit. The Zener diode also supports a high reverse power rating, allowing it to withstand a large amount of reverse current.

The TZMB16-GS08 is a widely used and reliable single Zener diode. Its special construction, thermal resistance and low reverse leakage current make it an excellent choice for a variety of applications, including RF high-frequency systems, power supply ripple noise reduction and EMI/RFI suppression filters. Its simple and efficient working principle makes it an invaluable component for any design.

The specific data is subject to PDF, and the above content is for reference

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