TZMB8V2-GS18

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes, or PN-junction semiconductor devices, are commonly used for a variety of applications. TheTZMB8V2-GS18 is a PN junction diode specifically designed for zener voltage regulation and voltage clamping applications. It has a reverse breakdown voltage of 8V, a cathode marked with a band, and a power dissipation rating of 500mW. It is mainly used in systems that require a fast response time or a large breakdown voltage.

Reverse breakdown behavior is a phenomenon in PN junction devices that describes the decrease in the voltage drop across the junction when the reverse bias voltage is increased beyond the rated breakdown voltage. This can be used to establish a fixed voltage within a circuit, which helps to regulate the output and provide a degree of protection against accidental overvoltages. This behavior is exploited in the TZMB8V2-GS18 diode, which features an 8-volt breakdown voltage.

Once the breakdown voltage is reached, the device will attempt to maintain a voltage across the junction, which provides the regulation. This is dependent on the power dissipation, however, and the TZMB8V2-GS18 has a maximum power dissipation rating of 500mW. This allows the use of the device in systems with higher dissipation requirements than other diodes.

The TZMB8V2-GS18 can also be used as a voltage clamp. The device with a reverse bias voltage and the circuit leads shorted will release the stored energy, whereas a diode with a forward bias voltage will attempt to dissipate the energy to the external environment. In this way, the stored energy can be limited and the voltage clamp can be used as a protective device against accidental overvoltages.

The TZMB8V2-GS18 is suitable for applications requiring a fast response time and a large breakdown voltage. It is especially useful for zener voltage regulation and for providing a degree of protection against overvoltages. The diode’s maximum power dissipation rating of 500mW allows greater flexibility in design, making it suitable for a variety of applications.

The specific data is subject to PDF, and the above content is for reference