TZMB36-GS08

TZMB36-GS08 is a semiconductor diode, specifically a single Zener diode. It is mainly composed of a semiconductor PN junction, which performs a unique and important role in the field of electronics. This device is an essential element in many circuits, from relatively simple devices such as alarm circuits to more complicated devices such as switching power supplies.

The primary application field of the TZMB36-GS08 diode is protection against power surges, ensuring electrical equipment follows optimal current characteristics and providing protection against short-circuiting. Its working principle is essentially a regulated flow of current against a reverse-biased or reverse-poled potential across the diode junction. When the diode is subsequently over-reverse biased, the current flow is essentially regulated against the high-voltage applied, up to its Zener Voltage, or breakdown voltage (Vz). The Zener Voltage is a specified minimum voltage at which the diode will conduct current.

The TZMB36-GS08 diode has a maximum reverse breakdown voltage, Vr, of 36 V, and the maximum power dissipation rating is 300 mW, or 0.3 W. The standard operating temperature range is -55 to +125℃. This diode is manufactured and packaged in the SMD-EX package, which is a clear window flat surface-mounting (SMD) package, and it is additionally RoHS compliant. This device also offers a very low thermal transfer resistance, making it suitable for applications where thermal management is paramount.

A Zener diode performs its ‘regulated breakdown’ by a process known as the ‘Zener breakdown or the Zener effect’. This process of electric breakdown occurs when the diode is reverse biased and subjected to a higher reverse voltage, so that current is driven through it. The Zener breakdown current is relatively low, as the depletion region of the diode has a much higher electric field than standard PN junctions, and the potential barrier is much lower for the diode. This process effectively ‘clamps’ the voltage across the diode, allowing it to either protect against higher voltages developing on a circuit, or provide a maximum voltage to a current.

In the case of the TZMB36-GS08 diode, the Zener Voltage is 36 V. It is also regulated to a very precise value at room temperature, which is a major benefit of this device. The voltage across the device theoretically remains the same value even when temperatures vary due to increased current drawn, so optimal reliability and durability is ensured.

The TZMB36-GS08 is commonly used in applications such as voltage regulators and power supplies, to ensure precise voltage potentials are maintained. It can also be used in clamping applications, such as in protective circuits, to protect delicate components from damage caused by transient voltages. This device is also widely utilized in numerous other applications such as sensing, isolating and voltage dividing.

In summary, the TZMB36-GS08 is a Zener diode used for protection against power surges, ensuring electrical equipment follows optimal current characteristics, and providing protection against short-circuiting. It has a maximum reverse breakdown voltage of 36 V, a maximum power dissipation rating of 300 mW, and a standard operating temperature range of -55 to +125℃. This device is commonly used in voltage regulation and power supplies, as well as in clamping applications such as protective circuits.