TZMB8V2-GS08 Allicdata Electronics
Allicdata Part #:

TZMB8V2-GS08GITR-ND

Manufacturer Part#:

TZMB8V2-GS08

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 8.2V 500MW SOD80
More Detail: Zener Diode 8.2V 500mW ±2% Surface Mount SOD-80 Mi...
DataSheet: TZMB8V2-GS08 datasheetTZMB8V2-GS08 Datasheet/PDF
Quantity: 12500
1 +: $ 0.04000
10 +: $ 0.03880
100 +: $ 0.03800
1000 +: $ 0.03720
10000 +: $ 0.03600
Stock 12500Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 8.2V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 7 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 6.2V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Description

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TZMB8V2-GS08 is a type of single zener diodes. It has a wide range of applications and it is used in general purpose circuits, and it is widely used in the majority of simple and complex circuits like cellphones, computers, and other electronics products.

TZMB8V2-GS08

TZMB8V2-GS08 is manufactured using multi-spectral low-noise technology, which ensures its low on-state resistance and reliable performance. It has a maximum working voltage of 8 volts and a zener breakdown voltage of 6.8 volts. It also has a maximum power dissipation of 350 mW and a noise current rating of 6.5 mA. The diode is packaged in a vacuum sealed envelope and has a typical life expectancy of 10 years.

TZMB8V2-GS08 Application Field and Working Principle

TZMB8V2-GS08 diodes are mainly used to protect circuits. It works by preventing voltage to exceed certain level in the protected circuit. When a voltage higher than the breakdown voltage is applied, the diode becomes a low-impedance switch that diverts the current to the ground, thus protecting the protected circuit.

It can also be used in decoupling and switching applications, as well as in overvoltage protection circuits. The diode also serves well as a clamping element to prevent voltage transients. In addition, it can be adjusted to different zener breakdown voltages by optionally connecting a reverse biased zener diode in series to the TZMB8V2-GS08 diode.

The wide range of applications of this type of diode makes it one of the most popular diodes for electronic circuit design. For example, it can be used in regulating the output of power supplies, in blinking circuits, and in oscillator circuits. It can also be used as an input protection device for exposure to ESD or overvoltage conditions.

In terms of its working principle, TZMB8V2-GS08 diode allows the current to pass through the diode in one direction only. It has a high breakdown voltage and low on-state resistance. When the voltage applied on the diode is less than its breakdown voltage, the diode is off and it is in the high-impedance state. On the other hand, when the voltage applied on the diode is greater than its breakdown voltage, the diode will then be in the low-impedance state and it will conduct the current.

The high breakdown voltage of the TZMB8V2-GS08 diode allows it to be used in a wide range of applications such as overvoltage protection, current regulation, and decoupling applications. This type of diode can also be used to design simple oscillator circuits for timing and control purposes. The stability of the diode is also very important to ensure the reliable performance of the circuit.

Conclusion

The TZMB8V2-GS08 diode is a single zener diode. It has a wide range of applications and it is used in general purpose circuits, including cellphones, computers, and other electronics products. It has a maximum working voltage of 8 volts, a zener breakdown voltage of 6.8 volts, and a maximum power dissipation of 350 mW. It is mainly used to protect circuits and can also be used in decoupling and switching applications, and in overvoltage protection circuits. Its working principle states that when the voltage applied on the diode is less than its breakdown voltage, the diode is off and in the high-impedance state; when the voltage applied on the diode is greater than its breakdown voltage, the diode will then be in the low-impedance state and it will conduct the current.

The specific data is subject to PDF, and the above content is for reference

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