TZMB3V0-GS18 Allicdata Electronics
Allicdata Part #:

TZMB3V0-GS18-ND

Manufacturer Part#:

TZMB3V0-GS18

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 3V 500MW SOD80
More Detail: Zener Diode 3V 500mW ±2% Surface Mount SOD-80 Mini...
DataSheet: TZMB3V0-GS18 datasheetTZMB3V0-GS18 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02137
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 3V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 90 Ohms
Current - Reverse Leakage @ Vr: 4µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Description

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Diodes, or rectifiers, are essential components in many modern electronic designs; they are utilized to convert alternating current (AC) to direct current (DC). Among different kind of diodes, Zener diodes, in particular, are semiconductor devices specifically designed to maintain a constant, steady and low voltage level even when attached to a power supply with wider voltage fluctuations. The TZMB3V0-GS18 is a single Zener diode designed to withstand up to a maximum power dissipation of 18 mW.

The TZMB3V0-GS18 is composed of two separate layers: a P–N semiconductor junction and a protective coating, which makes it highly suitable for both surface mounted and through-hole applications. The P–N junction layer is composed of a type N layer (which is always meant to be the first layer) below a type P layer, which contains a barrier in the range of 3.0V. This barrier layer helps to control the reverse current flow and maintain the specifically defined working voltage, even when subjected to different current intensities. The protective coating covers the semiconductor layers and shields against mechanical and electrical damage.

The TZMB3V0-GS18 functions by allowing the current flow through the P–N junction layers only when the right amount of voltage is applied to it. This voltage needs to be higher than the barrier voltage inside the P–N junction in order to forward the current. When the applied voltage is lower than the barrier voltage, the diode gets cut off and no current will flow in any direction. If the value of the voltage applied to the diode is precisely equal to the barrier voltage of the P–N junction (i.e. 3.0V), the diode will behave as a perfect conductor, allowing an ideal amount of current to flow.

The TZMB3V0-GS18 is typically used for small electronic systems such as alarms and burglar systems. It can be used to protect sensitive components from overvoltage and to maintain defined voltage levels in systems with fluctuating power supplies. The TZMB3V0-GS18 also finds application in simple circuit-based solutions, such as vehicle lighting and signal regulation circuits.

The TZMB3V0-GS18 offers compact size, low power dissipation and reliable working performance. It has a maximum reverse voltage of 3.1V and a forward voltage of 6.0V at an ambient temperature range of -30C to +125C. Furthermore, it has a high thermal tolerance and can withstand up to 8A peak power dissipation.

Overall, the TZMB3V0-GS18 is a reliable and cost-effective single Zener diode designed for small-scale, low power applications. It can be used to provide a steady and constant voltage output in fluctuating AC power supplies or in vehicles. Its highly durable body, protective coating, and low-cost manufacturing process, makes it an ideal choice for small electronic systems and signal regulation circuits.

The specific data is subject to PDF, and the above content is for reference

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