TZQ5258B-GS18 Allicdata Electronics
Allicdata Part #:

TZQ5258B-GS18-ND

Manufacturer Part#:

TZQ5258B-GS18

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 36V 500MW SOD80
More Detail: Zener Diode 36V 500mW ±5% Surface Mount SOD-80 Qua...
DataSheet: TZQ5258B-GS18 datasheetTZQ5258B-GS18 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.01852
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 36V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 70 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 27V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Supplier Device Package: SOD-80 QuadroMELF
Description

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Diodes - Zener - Single

TZQ5258B-GS18 is a single zener diode, manufactured with very small parameters. It is made of p-type and n-type semiconductors of silicon material, and is one type of two-terminal device. It is used mainly for correcting or control the voltage radiation and is used mainly in higher frequency applications.

Application Field

The application fields of TZQ5258B-GS18 are most suited for standard circuit, typical environments and medical applications. It has good application in standard environment, such as high voltage testing, voltage regulation, high frequency signal processing, home appliances switching, DC power supply, mobile communications, LED drives and so on. On the other hand, it can reach a current peak of 1.5A and is mostly used for central voltage control in precision medical equipment.

Working Principle

The working principle of the TZQ5258B-GS18 is based on the Zener breakdown effect. The Zener breakdown effect is the electrical breakdown of a diode when an applied voltage is greater than the reverse-biased breakdown voltage. When the reverse-biased diode is electrically stressed and reaches the Zener breakdown voltage, the voltage breaks down, thereby allowing current to flow from cathode to anode. The current through a reverse-biased diode is limited by the breakdown voltage and a resistor in series with it. When the current increases and exceeds a certain value, the diode will get into breakdown state.

The TZQ5258B-GS18 is a reverse-biased diode thus it has a Zener breakdown voltage range of 3.2 to 3.9V. The Zener breakdown voltage of a Zener diode can be easily controlled by the temperature, reverse-biasing and other conditions. The diode works as an ideal source of rectified current, which produces a highly effective rectified voltage at the anode. This rectified voltage is used to control voltage surges or serve as a voltage reduction device.

The working principle of the TZQ5258B-GS18 ensures it can be used in a variety of applications with precision voltage control. Its most common applications are in switching power supplies, as they require precise control of output voltage, as well as in overvoltage protection, voltage regulation and voltage multiplier circuits.

The TZQ5258B-GS18 is a single zener diode that has excellent parametrics for efficient, cost-effective operation. Its small size and precision voltage control, makes it suitable for a variety of applications ranging from switching power supplies to voltage regulator circuits, LED drivers and home electronics applications. With its wide Zener breakdown voltage range and high-current performance, the TZQ5258B-GS18 is ideal for any application requiring a reliable and efficient voltage regulator device.

The specific data is subject to PDF, and the above content is for reference

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