Allicdata Part #: | TZQ5259B-GS18-ND |
Manufacturer Part#: |
TZQ5259B-GS18 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 39V 500MW SOD80 |
More Detail: | Zener Diode 39V 500mW ±5% Surface Mount SOD-80 Qua... |
DataSheet: | TZQ5259B-GS18 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.01852 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 39V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 80 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 30V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-80 Variant |
Supplier Device Package: | SOD-80 QuadroMELF |
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Diodes are essential components in electrical circuits. Among them, Zener diodes are known for their capability to restrict current flow in one direction, while at the same time offering the added bonus of allowing a limited reverse current when the reverse voltage exceeds the breakdown voltage. The TZQ5259B-GS18 is a single Zener diode of the same family, one that provides excellent stability and temperature coefficient.
The TZQ5259B-GS18 is a popular diode that offers a robust design and reliable performance, making it dependable in long-term uses. This diode is a high-performance, high power diode that is well-suited for a wide range of applications requiring the efficient control of current. It is used in many different industries, including power electronics, telecommunications, computing, and automotive engineering.
The TZQ5259B-GS18 is a single Zener diode with a reverse breakdown voltage of 18V. It has a power dissipation of 5.2W at a junction temperature of 25°C and 1.5W at a junction temperature of 75°C. It offers excellent stability and temperature coefficient, a low leakage current of 0.5 μA max at VR=12V, and a high surge current of selected capabilities up to 5A. Moreover, this diode has a PN junction configuration, which helps maintain the stability of the device over different temperature ranges.
The TZQ5259B-GS18 has a few key features that make it a popular choice in various applications. It is highly efficient in controlling current, offers impressive temperature stability and low leakage current, and provides superior surge current as compared to other similar Zener diodes. What’s more, this diode is also suitable for use in temperature-sensitive applications due to its low power dissipation, making it a good choice for applications that require quality performance even in extreme temperatures.
The working principle of the TZQ5259B-GS18 is the same as any other Zener diode. This diode takes the form of a simple PN junction device formed from a single semiconductor crystal. It is designed to allow a limited amount of reverse current when the reverse voltage exceeds the breakdown voltage. This behavior is used to regulate the voltage across an electronic component and provides superior protection from voltage fluctuations. In addition, it also works as a voltage control element due to its excellent stability and temperature coefficient.
In summary, the TZQ5259B-GS18 single Zener diode is an efficient and reliable component with a wide range of applications. It offers excellent stability and temperature coefficient, low leakage current, and high surge current, making it suitable for a variety of temperature-sensitive applications. Additionally, its working principle is the same as that of other Zener diodes--allowing a limited amount of reverse current when the reverse voltage exceeds the breakdown voltage.
The specific data is subject to PDF, and the above content is for reference
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