
TZS4689-GS08 Discrete Semiconductor Products |
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Allicdata Part #: | TZS4689-GS08GITR-ND |
Manufacturer Part#: |
TZS4689-GS08 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 5.1V 500MW SOD80 |
More Detail: | Zener Diode 5.1V 500mW ±5% Surface Mount SOD-80 Qu... |
DataSheet: | ![]() |
Quantity: | 7500 |
2500 +: | $ 0.02890 |
5000 +: | $ 0.02514 |
12500 +: | $ 0.02137 |
25000 +: | $ 0.02011 |
62500 +: | $ 0.01885 |
125000 +: | $ 0.01676 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 5.1V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Current - Reverse Leakage @ Vr: | 10µA @ 3V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 100mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-80 Variant |
Supplier Device Package: | SOD-80 QuadroMELF |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
- Diodes - Zener - Single
- TZS4689-GS08 Application Field and Working Principle
The TZS4689-GS08 application field involves a wide range of areas, and is most commonly used in current and voltage regulation and as a substitute for signal diodes. These components feature a relatively low voltage rating allowing them to be used in a variety of circuit topologies. The unique properties of Zener diodes make them invaluable in applications requiring circuit protection, regulation and signal control.
A Zener diode primarily consists of a highly doped P-type semiconductor substrate attached to an N-type substrate. The junction between the two substrates forms a PN junction. When reversely biased, the PN junction becomes an open circuit which allows current to flow through it. When forward biased, it acts as a regular diode, allowing current to flow only in one direction.
When the voltage on the Zener diode reaches the reverse breakdown voltage, however, the PN junction behaves differently. The forward biased depleted region of the PN junction expands, allowing more current to flow through it. This results in a decrease in the resistance of the junction and a decrease in the voltage across it. This phenomenon is referred to as the Zener breakdown effect.
The TZS4689-GS08 Zener diode has a reverse breakdown voltage rating of -4.89V and a forward voltage of 1.5V. This component can be used for a variety of applications requiring regulation or protection from transient voltages. The component\'s low reverse breakdown voltage rating makes it suitable for applications such as voltage-limited and voltage-regulating circuits. It can also be used as a transient suppressor or as a replacement for signal diodes.
The TZS4689-GS08 Zener diode has a power rating of 0.5W and a low forward voltage rating, making it suitable for a wide range of applications that require a low power, low voltage component. It also features a low forward voltage and a low reverse leakage current, allowing it to be used in applications such as voltage limiting and protection against transient voltages. The component\'s low reverse breakdown voltage and forward voltage ratings make it an excellent choice for applications requiring protection and regulation. The component\'s low power rating also makes it an ideal choice for cost-sensitive designs.
The specific data is subject to PDF, and the above content is for reference
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