TZX11B-TAP Allicdata Electronics
Allicdata Part #:

TZX11B-TAP-ND

Manufacturer Part#:

TZX11B-TAP

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 11V 500MW DO35
More Detail: Zener Diode 11V 500mW Through Hole DO-35
DataSheet: TZX11B-TAP datasheetTZX11B-TAP Datasheet/PDF
Quantity: 1000
30000 +: $ 0.01548
Stock 1000Can Ship Immediately
$ 0.01
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Box (TB) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 11V
Tolerance: --
Power - Max: 500mW
Impedance (Max) (Zzt): 25 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 8.2V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes - Zener - Single, TZX11B-TAP application field and working principle

The TZX11B-TAP is one of the most popular single Zener diode products on the market. This diode offers improved electrical parameters, a wide reverse breakdown voltage range, an improved junction temperature coefficient, a wide operating temperature range, and low noise characteristics. It is often used in automotive, medical, telecommunication, and industrial applications.

A Zener diode is a semiconductor device that allows a voltage of a specified reverse breakdown voltage. It is designed to conduct in the reverse direction when the applied voltage is greater than the breakdown voltage.Zener diodes also provide protection against overvoltage and provide a constant voltage source.

The TZX11B-TAP is a single Zener diode. It is an epitaxial-base, acid-oxide planar Zener diode. This diode has a maximum reverse voltage rating of 39 volts and a maximum forward current rating of 250 mA. It is configured as a 2-pin device and is suitable for use in applications requiring up to 39 V of reverse breakdown voltage.

The TZX11B-TAP also has an improved junction temperature coefficient. This coefficient is a measure of how much the diode\'s breakdown voltage decreases when the junction temperature of the diode increases. The coefficient for the TZX11B-TAP is 0.5V/°C, which is lower than typical coefficients of other Zener diodes.

The working principle of a Zener diode is based on the fact that when reverse voltage is applied to the diode, it breaks down and conducts current in the reverse direction. This break down voltage is known as the Zener voltage, which is the value of reverse voltage that is required to cause the conduction. When the Zener voltage is reached, the diode will continue to conduct until the reverse voltage is removed.

The TZX11B-TAP single Zener diode has a wide range of application fields including automotive, medical, telecom, and industrial applications. Its low noise characteristics, improved electrical parameters, wide reverse breakdown voltage range, improved junction temperature coefficient, and wide operating temperature range make it an ideal choice for applications where reliability and performance are important. It also provides protection against overvoltage and can be used as a constant voltage source.

The specific data is subject to PDF, and the above content is for reference

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