Allicdata Part #: | TZX11B-TRGITR-ND |
Manufacturer Part#: |
TZX11B-TR |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 11V 500MW DO35 |
More Detail: | Zener Diode 11V 500mW Through Hole DO-35 |
DataSheet: | TZX11B-TR Datasheet/PDF |
Quantity: | 30000 |
10000 +: | $ 0.01720 |
30000 +: | $ 0.01548 |
50000 +: | $ 0.01376 |
100000 +: | $ 0.01290 |
250000 +: | $ 0.01147 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 11V |
Tolerance: | -- |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 25 Ohms |
Current - Reverse Leakage @ Vr: | 1µA @ 8.2V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes – Zener – Single – TZX11B-TR Application Field and Working Principle
The TZX11B-TR is a zener diode commonly used for applications such as voltage regulation. It is simple to use, low cost and offers a wide voltage range from 3 to 68 volts. In a typical application, the line voltage is routed through the diode, allowing the user to set the line voltage to a desired level. Zener diodes such as the TZX11B-TR rely on a principle known as the Zener breakdown. This involves the application of a high reverse voltage across an intrinsic semiconductor, which results in a large reverse current flow and the generation of a relatively high voltage.
The TZX11B-TR diode is designed with a high-quality substrate, providing excellent temperature and voltage stability with minimal leakage current when compared to other similar diodes. The built-in guard rings also offer additional protection against static discharges. This device is primarily used in applications such as voltage regulation, over-voltage protection, diode logic, polarity inversion and voltage regulation in automotive, industrial, and home electronics.
In its basic configuration, the TZX11B-TR is composed of a P-N junction between an intrinsic semiconductor material, a depletion layer and a guardring. The P-N junction is formed by thermal deposition of a thin layer of semiconductor material on the intrinsic material. As the P-N junction is reverse biased, a high electric field builds up across the depletion layer, resulting in the generation of electron-hole pairs.
As the voltage across the device rises further, the electric field reaches a value known as the breakdown voltage. At this point, the number of electron-hole pairs exceeds the rate of recombination and a large reverse current flows through the junction. This current is then regulated by the built-in guard ring, ensuring the device remains stable even when the reverse voltage is raised higher still.
The primary benefit of the TZX11B-TR diode over other types is its wide voltage range, making it ideal for adjusting line voltages within a specific range. It also offers a low thermal resistance which means it can quickly adjust the voltage to the required level and fewer heat dissipation losses. Additionally, the wide guard ring ensures protection from static discharges and the high temperature stability ensures consistent performance over a wide range of temperatures.
In conclusion, the TZX11B-TR diode is a versatile and reliable option for a range of applications, whether it is used for voltage regulation, over-voltage protection, logic control or polarity inversion. It provides users with a wide voltage range and low thermal resistance, making it ideal for applications where consistent and reliable line voltage adjustments are needed. The built-in guard ring provides added protection against static discharges, while the high temperature stability gives users confidence in the consistent performance of this device in a range of different environments and conditions.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
TZX10A-TAP | Vishay Semic... | -- | 30000 | DIODE ZENER 10V 500MW DO3... |
TZX12A-TAP | Vishay Semic... | 0.02 $ | 30000 | DIODE ZENER 12V 500MW DO3... |
TZX12D-TAP | Vishay Semic... | 0.02 $ | 20000 | DIODE ZENER 12V 500MW DO3... |
TZX16C-TAP | Vishay Semic... | -- | 30000 | DIODE ZENER 16V 500MW DO3... |
TZX18A-TAP | Vishay Semic... | -- | 30000 | DIODE ZENER 18V 500MW DO3... |
TZX10A-TR | Vishay Semic... | 0.02 $ | 30000 | DIODE ZENER 10V 500MW DO3... |
TZX11B-TR | Vishay Semic... | 0.02 $ | 30000 | DIODE ZENER 11V 500MW DO3... |
TZX16C-TR | Vishay Semic... | 0.02 $ | 30000 | DIODE ZENER 16V 500MW DO3... |
TZX18A-TR | Vishay Semic... | 0.02 $ | 30000 | DIODE ZENER 18V 500MW DO3... |
TZX18B-TAP | Vishay Semic... | -- | 20000 | DIODE ZENER 18V 500MW DO3... |
TZX14B-TAP | Vishay Semic... | -- | 20000 | DIODE ZENER 14V 500MW DO3... |
TZX15B-TAP | Vishay Semic... | -- | 20000 | DIODE ZENER 15V 500MW DO3... |
TZX13B-TR | Vishay Semic... | 0.02 $ | 20000 | DIODE ZENER 13V 500MW DO3... |
TZX15X-TAP | Vishay Semic... | 0.02 $ | 1000 | DIODE ZENER 15V 500MW DO3... |
TZX10B-TAP | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 10V 500MW DO3... |
TZX10C-TAP | Vishay Semic... | -- | 1000 | DIODE ZENER 10V 500MW DO3... |
TZX10D-TAP | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 10V 500MW DO3... |
TZX11A-TAP | Vishay Semic... | -- | 1000 | DIODE ZENER 11V 500MW DO3... |
TZX11B-TAP | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 11V 500MW DO3... |
TZX11C-TAP | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 11V 500MW DO3... |
TZX11D-TAP | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 11V 500MW DO3... |
TZX12B-TAP | Vishay Semic... | -- | 1000 | DIODE ZENER 12V 500MW DO3... |
TZX12C-TAP | Vishay Semic... | -- | 1000 | DIODE ZENER 12V 500MW DO3... |
TZX13A-TAP | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 13V 500MW DO3... |
TZX13B-TAP | Vishay Semic... | -- | 1000 | DIODE ZENER 13V 500MW DO3... |
TZX13C-TAP | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 13V 500MW DO3... |
TZX14A-TAP | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 14V 500MW DO3... |
TZX14C-TAP | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 14V 500MW DO3... |
TZX15A-TAP | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 15V 500MW DO3... |
TZX15C-TAP | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 15V 500MW DO3... |
TZX16A-TAP | Vishay Semic... | -- | 1000 | DIODE ZENER 16V 500MW DO3... |
TZX16B-TAP | Vishay Semic... | -- | 1000 | DIODE ZENER 16V 500MW DO3... |
TZX18C-TAP | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 18V 500MW DO3... |
TZX10B-TR | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 10V 500MW DO3... |
TZX10C-TR | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 10V 500MW DO3... |
TZX10D-TR | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 10V 500MW DO3... |
TZX11A-TR | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 11V 500MW DO3... |
TZX11C-TR | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 11V 500MW DO3... |
TZX11D-TR | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 11V 500MW DO3... |
TZX12A-TR | Vishay Semic... | 0.01 $ | 1000 | DIODE ZENER 12V 500MW DO3... |
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