
Allicdata Part #: | 296-28251-2-ND |
Manufacturer Part#: |
UCC27322QDGNRQ1 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Texas Instruments |
Short Description: | IC MOSFET DVR 9A SGL HS 8MSOPLow-Side Gate Driver ... |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 32500 |
Series: | Automotive, AEC-Q100 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Driven Configuration: | Low-Side |
Channel Type: | Single |
Number of Drivers: | 1 |
Gate Type: | N-Channel, P-Channel MOSFET |
Voltage - Supply: | 4 V ~ 15 V |
Logic Voltage - VIL, VIH: | 1.1V, 2.7V |
Current - Peak Output (Source, Sink): | 9A, 9A |
Input Type: | Non-Inverting |
Rise / Fall Time (Typ): | 20ns, 20ns |
High Side Voltage - Max (Bootstrap): | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad |
Supplier Device Package: | 8-MSOP-PowerPad |
Base Part Number: | UCC27322 |
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1. Describe
UCC27322QDGNRQ1 Series High Speed Drivers Provides 9 A peak drive current in an industry standard pinout. These drivers can drive big MOSFETs for systems requiring extreme Miller Current transitions due to high dV/dt. This eliminates additional external circuitry that can replace multiple components to reduce space, design complexity, and Assembly cost. The two standard logic options are Supplied, Inverted and Non-Inverted. Using a design that minimizes shoot-through current, The outputs of these devices can provide high gate Drive current where Miller needs it most Plateau region during MOSFET switching transition. Unique hybrid output stage paralleled Bipolar and MOSFET transistors (TrueDrive) allow Efficient current transfer at low supply voltages. and With this driver architecture, UCC27322QDGNRQ1 can be used to Industry standard 6-A, 9-A and many 12-A drives application. Latch-up and ESD protection circuits are Also included. Finally, the UCC27322QDGNRQ1 provides a Enable (ENBL) function for better control over operation driver application. ENBL is implemented in pin 3, which was previously unused Industry standard pinout. it is internally pulled up to VDD is used for active high logic and can be left open Standard operation.
2. Feature
1. Compliant with automotive application requirements
2. AEC-Q100 certified with the following results:
– Device Temperature Grade 1: –40°C to 125°C Ambient operating temperature range
– Device HBM ESD classification level 2
– Device CDM ESD classification level C6
3. Added enabled industry standard pinout Function
4. ±9 A high peak current drive capability Miller Plateau with TrueDrive™ technology
5. Use an efficient constant current source Unique bipolar and CMOS output stage
6. TTL and CMOS compatible inputs independent of voltage
7. 20ns typical rise time and 15ns typical fall time With 10nF load
8. Typical propagation delay time of 25 ns Input falling and 35 ns input rising
9. 4V to 15V supply voltage
10. Thermally enhanced MSOP available PowerPAD™ Package
11. TrueDrive output architecture uses bipolar and CMOS transistors in parallel
3. Application
1. Switch mode power supply
2. DC-DC converter
3. Motor Controller
4. Line driver
5. Class D switching amplifier
6. Pulse transformer driver
4. Pin configuration
5. Pin Description
6. Application Information
Switching power supply applications require high current gate driver devices for a number of reasons. enable Fast switching of power devices and reduced associated power losses, enabling the use of powerful gate drivers Between the PWM output of the controller or signal isolation device and the gate of the power semiconductor equipment. Also, gate drivers are essential when sometimes using PWM is not feasible The controller directly drives the gate of the switching device. The situation that may be encountered is because of the PWM Signals from digital controllers or signal isolation devices are typically 3.3-V or 5-V logic signals that cannot Effectively turn on the power switch. A level shifting circuit is required to boost logic level signals to gate drive voltage to fully turn on the power device and minimize conduction losses. traditional buffer drive Circuits based on bipolar or MOSFET transistors arranged in totem poles as emitter followers configurations, proved insufficient because they lacked level shifting capability and low drive voltages Protect. The gate driver effectively combines level shifting and buffer drive functions. gate driver possible The effects of switching noise can also be minimized by placing the high-current driver close to the power switch, Drives gate drive transformers and controls floating power device gates, reducing power dissipation and heat Increases stress in the controller by absorbing gate charge power loss.
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