V10E40P Allicdata Electronics
Allicdata Part #:

V10E40P-ND

Manufacturer Part#:

V10E40P

Price: $ 0.16
Product Category:

Circuit Protection

Manufacturer: Littelfuse Inc.
Short Description: VARISTOR 68V 2KA DISC 10MM
More Detail: 68V 2kA Varistor 1 Circuit Through Hole Disc 10mm
DataSheet: V10E40P datasheetV10E40P Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1000 +: $ 0.15026
Stock 1000Can Ship Immediately
$ 0.16
Specifications
Varistor Voltage (Typ): 68V
Package / Case: Disc 10mm
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Capacitance @ Frequency: 1850pF @ 1MHz
Number of Circuits: 1
Energy: 28J
Current - Surge: 2kA
Varistor Voltage (Max): 74.8V
Series: LV UltraMOV™
Varistor Voltage (Min): 61.2V
Maximum DC Volts: 56V
Maximum AC Volts: 40V
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

V10E40P Application Field and Working Principle

TVS-Varistors, MOVs are among the most commonly used Electronic components and are typically used to protect sensitive circuits from voltage transients due to electrostatic discharge (ESD) or electrical fast transients. A Typical Transient Voltage Suppression (TVS) diode such as V10E40P is designed to protect a circuit from over voltage transients. It clinics in a reverse bias condition when a voltage transient occurs, allowing the flow of current to the protected circuit.

The V10E40P is an ultra-fast, low-capacitance diode designed for ESD protection in a variety of I/O and high-speed data interfaces. This device features a low voltage drop of 1.7 V max at rated breakdown current, and an operating current of 10mA max. It is capable of providing ESD protection for IEC Level 4 and other overvoltage conditions over a range of 15–40 V of reverse standoff, making it well suited for high voltage I/O applications.

The V10E40P operates at frequencies up to 4GHz and is designed to handle transients up to 4000 V. It can provide an operating current of 888 mA max at a rated breakdown voltage. The device is also well-suited to handle transients above 40 V. This makes the V10E40P ideal for applications requiring additional protection over the rated voltage range.

The V10E40P works based on the concept of reverse breakdown voltage. It has a junction created by a PN-junction which is divided into a n-type (N) and a p-type (P) material and a cathode and an anode. When the applied forward voltage is greater than the reverse breakdown voltage, then the diode enters a ‘breakdown’ region and begins to conduct current. The current then allows the charge to spread across the junction.

When the reverse bias current is applied, the V10E40P goes into reverse breakdown to protect the circuit from any over voltage transients. When a voltage transient occurs, the voltage is clamped to the breakdown voltage, thereby eliminating overvoltage transients before they can damage the other components of the circuit. In this way, the V10E40P protects the circuit from transients caused by Electrostatic Discharge (ESD), lightning, and other transient voltage sources.

The V10E40P is an excellent choice for protection against a wide range of overvoltage transient events. Its low voltage drop and high frequency performance make it ideal for all kinds of high speed data interface applications, such as USB, Fire wire, CAN bus and other Industrial, automotive and medical applications. Its surge handling capability and ESD performance also make it well suited for protecting circuits from overvoltage transients.

The specific data is subject to PDF, and the above content is for reference

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