VBT2060C-M3/8W Allicdata Electronics
Allicdata Part #:

VBT2060C-M3/8W-ND

Manufacturer Part#:

VBT2060C-M3/8W

Price: $ 0.51
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 20A 60V TO-263AB
More Detail: Diode Array 1 Pair Common Cathode Schottky 60V 10A...
DataSheet: VBT2060C-M3/8W datasheetVBT2060C-M3/8W Datasheet/PDF
Quantity: 1000
2400 +: $ 0.45696
Stock 1000Can Ship Immediately
$ 0.51
Specifications
Series: TMBS®
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 650mV @ 10A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 850µA @ 60V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Description

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The VBT2060C-M3/8W is a diode array, part of a wide portfolio of products that are available from a major manufacturer. It is a comprehensive, compact, and cost-effective device that can be used for multiple applications in consumer and industrial electronics. This diode array combines two MOSFETs and four high-voltage Schottky barrier rectifiers in one package. This device has been designed with multiple features such as low forward voltage characteristics, high output current capability, and very tight VF uniformity.

The VBT2060C-M3/8W diode array is mainly used in automobile, communication and consumer electronics applications. This device is suitable for use as a rectifier, a buffer, and an inverter in these applications. It is also suitable for use as an ESD protection device and as a buffer in memory cell applications.

The working principle of the VBT2060C-M3/8W is based on the forward voltage drop or reverse leakage characteristics of the diode. In forward working condition, the diode behaves like a closed switch and forward current flows through it. In reverse or leakage condition, current does not flow through the diode and it acts as an open switch. This characteristic of the diode makes it suitable for use as a rectifier and for clamping applications.

The VBT2060C-M3/8W is also notable for its low forward voltage drop and tight voltage regulation. In forward working condition, the device has a low forward voltage drop (VF). This low drop allows it to be used as an efficient rectifier in the applications mentioned above. Tight voltage regulation ensures that the output voltage stays within the specified voltage range while operating. This property is essential for devices that need to be buffered from voltage spikes and transients.

The wide range of applications that the VBT2060C-M3/8W can be used for highlights the importance of this device in the electronics industry. It is a compact, cost-effective and reliable solution for various types of applications that require rectifying, buffering, and voltage regulation properties. It can be used as an ESD protection device and as a buffer in memory cell applications as well. The VBT2060C-M3/8W is a versatile device that is ideal for use in a range of applications.

The specific data is subject to PDF, and the above content is for reference

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