VBT2060G-E3/8W Allicdata Electronics
Allicdata Part #:

VBT2060G-E3/8W-ND

Manufacturer Part#:

VBT2060G-E3/8W

Price: $ 0.29
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 10A 60V TO-263AB
More Detail: Diode Array 1 Pair Common Cathode Schottky 60V 10A...
DataSheet: VBT2060G-E3/8W datasheetVBT2060G-E3/8W Datasheet/PDF
Quantity: 1000
1600 +: $ 0.26066
Stock 1000Can Ship Immediately
$ 0.29
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 700µA @ 60V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Description

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Diodes - Rectifiers - Arrays

The VBT2060G-E3/8W is a semiconductor device specially designed to cater to higher power applications that are in need of an efficient and reliable power electronics solution. It is a rectifier bridge array with a peak surge current rating of 8A, and a peak inverse voltage rating of 600V. The device is packaged in a TO-220-3L full molded form factor which gives users a great advantage due to its small size and low thermal resistance – ideal for use in industrial and automotive applications.

A rectifier bridge is a type of diode which is used primarily for the conversion of an alternating current waveform into a direct current waveform. The bridge rectifier is composed of four diodes which have been configured in a bridge formation in order to ensure full wave rectification. A waveform is said to have gone through a full wave rectification process when both the positive and the negative parts of the waveform have all been converted into a single uniform wave.

The VBT2060G-E3/8 is built on a high-performance silicon wafer process which is optimized for both high speed and low forward voltage drop. This allows the device to deliver an excellent combination of efficiency and reliable power conversions. The device is also RoHS compliant and UL certified, which further enhances its credibility and usefulness in today’s market.

The VBT2060G-E3/8W also features a low thermal resistance to minimize power losses and also provides efficient heat dissipation. The device also features a temperature compensated breakdown voltage which can provide a more stable current output over a wide range of temperatures and load conditions, which is quite beneficial from a safety perspective. The device also features a low forward voltage drop, which allows the device to work without generating excessive power losses.

The versatility of the VBT2060G-E3/8W makes it an ideal choice for many applications; some of which include: Power supplies, Inverters & DC-DC converters, Motor drives and Speed controls, Industrial Automation, Medical Equipment, Telecommunications and Automotive Applications as well.

The VBT2060G-E3/8W is specifically designed to provide the highest level of power conversion efficiency, reliability, and safety. By making use of advanced technology, the VBT2060G-E3/8W provides users with a reliable and hassle free power solution, making it ideal for applications in the mentioned fields.

The specific data is subject to PDF, and the above content is for reference

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