VBT2080S-M3/4W Allicdata Electronics
Allicdata Part #:

VBT2080S-M3/4W-ND

Manufacturer Part#:

VBT2080S-M3/4W

Price: $ 0.42
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 20A 80V TO-263AB
More Detail: Diode Schottky 80V 20A Surface Mount TO-263AB
DataSheet: VBT2080S-M3/4W datasheetVBT2080S-M3/4W Datasheet/PDF
Quantity: 1000
4000 +: $ 0.37989
Stock 1000Can Ship Immediately
$ 0.42
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 20A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 700µA @ 80V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -55°C ~ 150°C
Description

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The VBT2080S-M3/4W is a single rectifier diode, which carries out various functions in general electronic applications. With an optimized structure, it provides a particularly low voltage drop for low-power applications. The maximum current carrying capability of this diode is 3.2A with a maximum reverse voltage of 800V. Furthermore, the VBT2080S-M3/4W has a large junction area and a high peak forward surge current. These aspects give this diode several advantages for small applications.

The primary application field of the VBT2080S-M3/4W is in low-current applications, where it can provide excellent efficiency due to its low reverse voltage. Power conditioning and stabilizing circuits are also a common use for it. Furthermore, its distinct features allow it to be implemented in a variety of consumer electronics, such as temperature controllers and audio amps. Additionally, its optimized structure makes it suitable for other circuit arrangements such as half-wave rectifiers or AC/DC converters.

The VBT2080S-M3/4W has a very simple working principle. A metal layer between the N-type and P-type materials of the diode acts as a barrier for the electrons. When a forward polarization is applied, the metal layer breaks and allows the electrons to flow from the N-type to P-type material. This process is commonly also referred to as avalanche breakdown, because the current is increased beyond the normal limit while the voltage is decreased. When the voltage is reversed, the metal layer acts as a blockade, preventing the flow of electrons and thus blocking the current.

The VBT2080S-M3/4W also has a high temperature operating capability. This ensures that it can be used in even more demanding applications, enabling for a wide temperature range in which the diode is still functional. It also includes a proprietary material that allows for a faster recovery time, resulting in a more efficient energy conversion. Additionally, this single rectifier diode offers excellent surge handling capabilities, allowing it to perform even under extreme conditions.

The VBT2080S-M3/4W is a single rectifier diode with various applications in general electronic applications. Its optimized structure and working principle offer key advantages for small applications, such as power conditioning, stabilizing circuits, and audio amps. The diode also has a high temperature operating capability, fast recovery time, and excellent surge handling. This makes it an ideal choice for a wide variety of low-current applications.

The specific data is subject to PDF, and the above content is for reference

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