Allicdata Part #: | VBT2080C-E3/4WGI-ND |
Manufacturer Part#: |
VBT2080C-E3/4W |
Price: | $ 0.92 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ARRAY SCHOTTKY 80V TO263AB |
More Detail: | Diode Array 1 Pair Common Cathode Schottky 80V 10A... |
DataSheet: | VBT2080C-E3/4W Datasheet/PDF |
Quantity: | 172 |
1 +: | $ 0.83160 |
50 +: | $ 0.70384 |
100 +: | $ 0.57815 |
500 +: | $ 0.47760 |
1000 +: | $ 0.37706 |
Series: | TMBS® |
Packaging: | Tube |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 80V |
Current - Average Rectified (Io) (per Diode): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 810mV @ 10A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 600µA @ 80V |
Operating Temperature - Junction: | 150°C (Max) |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
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.Diodes - Rectifiers - Arrays
The VBT2080C-E3/4W is a diode array, with two silicon rectifiers connected in parallel, allowing for a higher operating temperature range. This diode array has a number of advantages over single, discrete devices, and is especially suited for applications in which space is at a premium.
Application Field
The VBT2080C-E3/4W diode array is ideal for a wide variety of applications, including power management, over-voltage protection, alternate energy, consumer electronics, telecom and automotive electronics. The device\'s parallel rectifiers offer good reverse recovery, low thermal impedance and fast transient response, making it suitable for use in circuit designs that require maximum stability and low input capacitances.
Working Principle
The principle on which the VBT2080C-E3/4W diode array operates is simple. When a current is applied to the anode, the diode conducts and allows current to flow. When the current is reversed and flows in the opposite direction, the diode blocks the flow of current. This blocking action is the key feature of the device, allowing it to be used in applications where over-voltage protection is required.
The VBT2080C-E3/4W also has a junction capacitance of 12pF, which further enhances its performance during transient events. This capacitance allows the device to better handle short duration spikes or surges in voltage.
Conclusion
The VBT2080C-E3/4W diode array is a power-management device that is well-suited for a wide array of applications. Its parallel rectifiers offer high-performance characteristics, allowing it to provide good over-voltage protection and fast transient response. Furthermore, its 12pF junction capacitance further enhances its performance during transient events.
The specific data is subject to PDF, and the above content is for reference
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