VBT2080C-E3/4W Allicdata Electronics
Allicdata Part #:

VBT2080C-E3/4WGI-ND

Manufacturer Part#:

VBT2080C-E3/4W

Price: $ 0.92
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ARRAY SCHOTTKY 80V TO263AB
More Detail: Diode Array 1 Pair Common Cathode Schottky 80V 10A...
DataSheet: VBT2080C-E3/4W datasheetVBT2080C-E3/4W Datasheet/PDF
Quantity: 172
1 +: $ 0.83160
50 +: $ 0.70384
100 +: $ 0.57815
500 +: $ 0.47760
1000 +: $ 0.37706
Stock 172Can Ship Immediately
$ 0.92
Specifications
Series: TMBS®
Packaging: Tube 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 810mV @ 10A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 600µA @ 80V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Description

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Diodes - Rectifiers - Arrays

The VBT2080C-E3/4W is a diode array, with two silicon rectifiers connected in parallel, allowing for a higher operating temperature range. This diode array has a number of advantages over single, discrete devices, and is especially suited for applications in which space is at a premium.

Application Field

The VBT2080C-E3/4W diode array is ideal for a wide variety of applications, including power management, over-voltage protection, alternate energy, consumer electronics, telecom and automotive electronics. The device\'s parallel rectifiers offer good reverse recovery, low thermal impedance and fast transient response, making it suitable for use in circuit designs that require maximum stability and low input capacitances.

Working Principle

The principle on which the VBT2080C-E3/4W diode array operates is simple. When a current is applied to the anode, the diode conducts and allows current to flow. When the current is reversed and flows in the opposite direction, the diode blocks the flow of current. This blocking action is the key feature of the device, allowing it to be used in applications where over-voltage protection is required.

The VBT2080C-E3/4W also has a junction capacitance of 12pF, which further enhances its performance during transient events. This capacitance allows the device to better handle short duration spikes or surges in voltage.

Conclusion

The VBT2080C-E3/4W diode array is a power-management device that is well-suited for a wide array of applications. Its parallel rectifiers offer high-performance characteristics, allowing it to provide good over-voltage protection and fast transient response. Furthermore, its 12pF junction capacitance further enhances its performance during transient events.

The specific data is subject to PDF, and the above content is for reference

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