VM0550-2F

Series:	HiPerFET™
Packaging:	Bulk
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	590A (Tc)
Rds On (Max) @ Id, Vgs:	2.1 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:	--
Gate Charge (Qg) (Max) @ Vgs:	2000nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	50000pF @ 25V
FET Feature:	--
Power Dissipation (Max):	2200W
Operating Temperature:	--
Mounting Type:	Chassis Mount
Supplier Device Package:	Module
Package / Case:	Module

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VM0550-2F Application Field and Working Principle

VM0550-2F is a deposition tool built by the Zopto Corporation, widely used in the industry for sample analysis and modification. It is based on the single-mode, field-effect transistor (MOSFET) structure, and can perform reliable and accurate measurements with minimal cost.VM0550-2F is designed to detect and measure electrical charge densities. It uses a “channel” formed in a semiconductor substrate to conduct electrons between two data points. The channel is formed by a separate gate terminal, which can be varied in the presence of an external voltage. Based on this principle, VM0550-2F is able to provide measurements of static and dynamic characteristics, such as current-drain resistance, carrier mobility, and transistor gain-bandwidth products.In its application field, VM0550-2F is commonly employed for measuring metal-oxide-semiconductor structures and for lithography. It is generally used to identify the source and drain regions, as well as the channel length, of metal-oxides. The purpose of such measurements is to determine the optimal transistor design for a given application. This would include the analysis of transistor characteristics, such as current-drain resistance, transconductance, and collector-base capacitance. Furthermore, with the use of its gate terminal, VM0550-2F can be used for lithography, allowing for the fabrication of economically and technologically efficient devices.The working principle of VM0550-2F is as follows. A gate terminal is connected to a semiconductor substrate, typically through an insulator. When an input voltage is applied to the gate terminal, an electric field is created in the substrate. This electric field will alter the current flow through the channel, resulting in modified source-drain resistance and transconductance. The resulting output voltage at the gate terminal is then used to calculate various device characteristics, such as current-drain resistance, carrier mobility and transistor gain-bandwidth product.In conclusion, VM0550-2F is a useful tool in the industry, designed to measure electrical charge densities. It is based on a single-mode, field-effect transistor (MOSFET) structure and is used in the analysis and modification of metal-oxide-semiconductor structures or for lithography. Its working principle is that an electric field is created in the substrate, which changes the current flowing through the channel and provides a measure of device properties.

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