Allicdata Part #: | VMO40-05P1-ND |
Manufacturer Part#: |
VMO40-05P1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH ECO-PAC2 |
More Detail: | N-Channel Chassis Mount ECO-PAC2 |
DataSheet: | VMO40-05P1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Chassis Mount |
Supplier Device Package: | ECO-PAC2 |
Package / Case: | ECO-PAC2 |
Base Part Number: | VMO |
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The VMO40-05P1 is a power MOSFET transistor device, which belongs to the single junction transistor family. It is typically used for general purpose applications in a wide range of applications, including power switching, voltage regulation, and power control.
The VMO40-05P1 device consists of two conducting layers known as the source and drain parts. A gate terminal is also present between these two layers which is responsible for controlling the current flow. The structure of the VMO40-05P1 is such that it is more efficient in applications requiring high current and voltage ratings than conventional transistors.
To understand the working principle of the VMO40-05P1, it is important to first understand how a single junction transistor works. The basic idea behind a single junction transistor is the use of a metal oxide gate between the source and drain layers. This gate acts as a barrier to the current flow, meaning that a certain amount of voltage must be applied to the gate in order to induce a current flow.
When the voltage applied to the gate reaches a certain level, known as the threshold voltage, a current begins to flow. This current flow can be controlled by changing the voltage applied to the gate. By doing this, the current flow can be adjusted to meet the needs of the application.
In the case of the VMO40-05P1 device, the gate is the active layer, meaning that it can be used to switch current at low voltages. When a voltage is applied to the gate, the electrons in the MOSFET are pushed away from the drain, creating a space for the electrons to fill and allowing the current to flow. As the voltage is increased, the electrons become more and more concentrated at the drain, creating a larger field and allowing for higher currents to flow.
The VMO40-05P1 is an ideal choice for applications such as power switching, voltage regulation, and power control. It has the capability to operate at high frequencies and is capable of handling high current and voltage ratings. With its low power consumption and its efficient operation, the VMO40-05P1 is particularly well-suited for use in a variety of applications and systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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VMO40-05P1 | IXYS | 0.0 $ | 1000 | MOSFET N-CH ECO-PAC2N-Cha... |
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