Allicdata Part #: | VN0106N3-G-P003-ND |
Manufacturer Part#: |
VN0106N3-G-P003 |
Price: | $ 0.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET N-CH 60V 350MA TO92-3 |
More Detail: | N-Channel 60V 350mA (Tj) 1W (Tc) Through Hole TO-9... |
DataSheet: | VN0106N3-G-P003 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.33743 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 350mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id: | 2.4V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 65pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-92-3 |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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VN0106N3-G-P003 is a single N-Channel Enhancement Mode MOSFET, packaged in the 2x3 PowerPAK SO-8. This MOSFET is used in many applications and is especially useful in power management circuits.
Application Fields
VN0106N3-G-P003 is used in a variety of applications such as switch-mode power supplies, motor control, power conversion in consumer electronics, load switch and general purpose discrete circuits. It can also be used to switch low frequency digital logic signals, due to its low RDS(ON) and large output voltage swing. Overall, VN0106N3-G-P003 is an efficient and reliable choice for various applications that require low power consumption.
Working Principle
VN0106N3-G-P003 works on the principle of MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This semiconductor device is made from an analogous interface between a metal gate and a semiconductor substrate, usually silicon. It has three terminals, Gate, Source and Drain. When a voltage is applied between the Gate and the Source terminals, it creates an electric field which allows the current to flow between the Source and the Drain terminals. The strength of the electric field, and consequently the amount of current it can control depends on the voltage applied between the Gate and the Source. The amount of current it passes is proportional to the Gate - Source voltage and varies non-linearly with Gate - Source voltage.
The VN0106N3-G-P003 has a low On-Resistance, making it more efficient than other MOSFETs. This low On-Resistance is especially useful when switching larger currents, as it allows the device to dissipate less Heat-Sink Power than other MOSFETs. Furthermore, the VN0106N3-G-P003 has a high maximum operating temperature of 175ºC, making it suitable for use in applications with high-heat dissipation environments.
The primary benefit of the VN0106N3-G-P003 is its low power consumption and high performance. With its low On-Resistance and low Gate-Source voltage requirements, the VN0106N3-G-P003 is especially suitable for low power and high performance applications. Additionally, due to the small size of the package, the VN0106N3-G-P003 can be used in applications where size and space are a major concern.
Overall, the VN0106N3-G-P003 is an excellent choice for a variety of applications. It is suitable for low power and high performance switching applications, motor control, low frequency digital logic signals and other general purpose discrete circuits. Additionally, its low power consumption, high maximum operating temperature, and small form factor make the VN0106N3-G-P003 an ideal choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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