VN0104N3-G Allicdata Electronics
Allicdata Part #:

VN0104N3-G-ND

Manufacturer Part#:

VN0104N3-G

Price: $ 0.41
Product Category:

Discrete Semiconductor Products

Manufacturer: Microchip Technology
Short Description: MOSFET N-CH 40V 350MA TO92-3
More Detail: N-Channel 40V 350mA (Tj) 1W (Tc) Through Hole TO-9...
DataSheet: VN0104N3-G datasheetVN0104N3-G Datasheet/PDF
Quantity: 1232
1 +: $ 0.37800
25 +: $ 0.31147
100 +: $ 0.28552
Stock 1232Can Ship Immediately
$ 0.41
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 65pF @ 25V
FET Feature: --
Power Dissipation (Max): 1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Description

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The VN0104N3-G is a vertical N-channel MOSFET transistor offering a variety of options for many electronic applications. This type of device is a single transistor that functions by manipulating the electric charge of the base material (typically a semiconductor). The VN0104N3-G is tailorable for a range of applications, from controlling voltage and providing protection from overloads to controlling the gain of a circuit.

The VN0104N3-G utilizes a vertical design to deliver the best performance possible in a variety of environments. Its N-channel MOSFET makes it capable of switching a high-frequency current up to 30 MHz with a response time of 10 ns. The maximum drain source voltage of this component can reach 100 V, while its drain-source on-resistance is 0.037 ohms. This transistor also includes a 20V gate-source voltage rating and a 500 µA gate current rating.

The working principle of a vertical N-channel MOSFET such as the VN0104N3-G allows users to easily and quickly switch high-frequency currents or perform current control or protection functions. This transistor can control or limit the amount of current passing through the circuit, and its resistance can handle up to 100V. To effectively function, a sufficient electric charge must be present in the base material to override the resistance and achieve an on/off voltage state.

The VN0104N3-G has a wide range of applications and can be used in industries such as automotive, medical, communications and industrial. This device can be used in high-power circuits for the control of load devices, for the switching of electrical signals at high speeds, and for improving the frequency response of filters. This device can also be used in protection circuits, as it offers reliable protection from overloads and short circuits.

The VN0104N3-G also offers some energy saving performance. By using the transistor’s highly efficient switching capabilities, it is possible to reduce the energy usage of the device and the amount of overall energy consumed. This can be achieved by decreasing the time needed to switch states, as well as controlling the operational voltage.

In conclusion, the VN0104N3-G is an N-channel MOSFET transistor that can be used for a range of applications, from controlling voltage and providing protection from overloads to controlling the gain of a circuit. With its vertical design, this device can switch a high-frequency current up to 30MHz with a response time of 10ns. This device offers reliable protection from overloads and short circuits, as well as energy savings. The VN0104N3-G is a powerful and reliable device that can be used in a variety of industries to improve the performance and reliability of various electronic systems.

The specific data is subject to PDF, and the above content is for reference

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