VN0550N3-G

Series:	--
Packaging:	Bulk
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	500V
Current - Continuous Drain (Id) @ 25°C:	50mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Rds On (Max) @ Id, Vgs:	60 Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id:	4V @ 1mA
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	55pF @ 25V
FET Feature:	--
Power Dissipation (Max):	1W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-92-3
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)

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The VN0550N3-G is a high-performance MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) that can be used in various applications. MOSFETs are widely used in the electronics industry due to their low power consumption and low input capacitance. The VN0550N3-G is a mesa-type (three-dimensional) MOSFET which is designed for spatial integration into electronic circuits. It can be used in a variety of applications including analog and logic circuits as well as RF switching, DC-DC converters, and motor control applications.The VN0550N3-G is a N-channel enhancement-mode device, meaning it requires an input voltage to enable current flow. With the gate-body capacitance for the VN0550N3-G being just 1.7pF, it is ideal for applications needing fast switching. This MOSFET also has an impressive ruggedness, withstanding up to a 30V drain to source voltage and 3A of continuous drain current without degradation. This makes it perfect for power management circuits as well as automotive applications.The working principle of a MOSFET is fairly simple. When no voltage is present at the gate, the current will not flow between the drain and source connections. This is due to the fact that there is no way for the electrons to cross the channel between the source and drain contacts. When a voltage is applied to the gate, the electric field between the gate and channel region increases and forces electrons towards the channel resistance. This creates a conducting channel between the source and drain contacts and as a result, current can flow.In summary, the VN0550N3-G is a MOSFET designed for high-performance applications with a low gate-body capacitance that makes it ideal for fast switching. It has a 30V drain to source rating and can withstand up to 3A of continuous drain current, making it suitable for both power management and automotive applications. The MOSFET works according to the simple principle that an input voltage is required to enable current flow.

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