Allicdata Part #: | VN3205N3-G-ND |
Manufacturer Part#: |
VN3205N3-G |
Price: | $ 0.89 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET N-CH 50V 1.2A TO92-3 |
More Detail: | N-Channel 50V 1.2A (Tj) 1W (Tc) Through Hole TO-92... |
DataSheet: | VN3205N3-G Datasheet/PDF |
Quantity: | 24 |
1 +: | $ 0.80640 |
25 +: | $ 0.66830 |
100 +: | $ 0.60997 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 1.2A (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 300 mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 2.4V @ 10mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 300pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-92-3 |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
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The VN3205N3-G is a MOSFET that is used in a variety of applications, ranging from basic switches to high-power amplifiers. It has a wide range of applications due to its low threshold voltage, high drain-source voltage, and low on-state resistance. It is also capable of withstanding a high power density, which makes it an ideal choice for high-power applications.
The VN3205N3-G is a single-channel, depletion-mode MOSFET. This means that it is capable of conducting current in either direction, depending on the voltage applied to its gate. When the gate voltage is low, the MOSFET is in the cutoff or non-conducting state. When the voltage is increased, the MOSFET transitions to the high-conductance state, allowing current to flow through it. This enables the MOSFET to be used as an electronically controlled switch. It is also capable of providing amplification, provided that an appropriate bias voltage is applied to its gate. The low on-state resistance of the MOSFET ensures that it dissipates very little power, making it ideal for applications that require low power consumption.
The VN3205N3-G is capable of withstanding a high power density, even in its most saturated state. This makes it suitable for high-power applications such as power amplifiers. The low threshold voltage and high drain-source voltage also make it suitable for voltage-controlled switching applications. Furthermore, its low on-state resistance increases its efficiency, making it ideal for applications that require states that switch quickly and consume lower amounts of power.
The VN3205N3-G is an extremely versatile device, which makes it ideal for a variety of applications. Its wide range of threshold voltage, drain-source voltage, and self-limiting current capabilities makes it suitable for a wide range of applications, from basic switching to high-power amplification. The MOSFET is also capable of withstanding high power density and is capable of providing high efficiency for applications that require low power consumption.
Overall, the VN3205N3-G is an ideal choice for a variety of applications. It is highly efficient, capable of withstanding a high power density, and has low on-state resistance. It is also capable of providing a wide range of threshold voltage and drain-source voltages, as well as providing a self-limiting current capability. Its versatility makes it ideal for applications ranging from basic switching to high-power amplifiers.
The specific data is subject to PDF, and the above content is for reference
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