Allicdata Part #: | VN4012L-G-ND |
Manufacturer Part#: |
VN4012L-G |
Price: | $ 1.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET N-CH 400V 0.16A TO92-3 |
More Detail: | N-Channel 400V 160mA (Tj) 1W (Tc) Through Hole TO-... |
DataSheet: | VN4012L-G Datasheet/PDF |
Quantity: | 226 |
1 +: | $ 0.95760 |
25 +: | $ 0.79808 |
100 +: | $ 0.72677 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 400V |
Current - Continuous Drain (Id) @ 25°C: | 160mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V |
Rds On (Max) @ Id, Vgs: | 12 Ohm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.8V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 110pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-92-3 |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
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VN4012L-G is a high power MOSFET transistor with a relatively low threshold voltage. It is capable of providing great performance and power in low voltage applications. The device is made up of a 4-level structure which provides superior overall on-state linearity. It is designed to provide fast switching of high current and high voltage loads, as well as excellent high frequency performance under heavy duty conditions.
In terms of its application field, the VN4012L-G is a great option for use in switching products, such as AC/DC converters, relay switches, temperature control circuits, motor drivers, and high-side drivers. Its combination of features makes it an ideal choice for many different small current and voltage applications.
In terms of its working principle, the VN4012L-G is based on the MOSFET technology. It works by transferring electrons when the voltage across the drain and source is within a certain range (the so called "threshold voltage"). The MOSFET is composed of a substrate, gate, and source/drain regions. The substrate is a semi-conductor material in which the source and drain regions consist of N-type and P-type regions respectively. The gate is insulated and controls the current between the source and drain. The electrons flowing across the MOSFET are effectively controlled by the voltage at the gate. When the gate voltage is in the specified range, the electrons flow, and when it is out of the range, the electrons are blocked.
VN4012L-G is an easily adjustable, reliable, and powerful MOSFET device designed to offer good performance and power in low voltage applications. With a low threshold voltage and a 4-level structure, it provides superior on-state linearity for various applications and enhanced protection for sensitive load devices. Additionally, its combination of features makes it a great option for many small current and voltage applications, particularly in switching products.
The specific data is subject to PDF, and the above content is for reference
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