Allicdata Part #: | VP0550N3-G-ND |
Manufacturer Part#: |
VP0550N3-G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET P-CH 500V 0.054A TO92-3 |
More Detail: | P-Channel 500V 54mA (Tj) 1W (Tc) Through Hole TO-9... |
DataSheet: | VP0550N3-G Datasheet/PDF |
Quantity: | 973 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 54mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 125 Ohm @ 10mA, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 70pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-92-3 |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
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The VP0550N3-G is a field effect transistor (FET) which is used as an amplifier. It is a part of a particular type of FETs known as Metal Oxide Semiconductor Field Effect Transistor (MOSFET). A single VP0550N3-G is composed of three electrically separated regions: Source, Drain and Gate. It has a single polarity and is designed to be used with a wide range of voltage and current ranges.
Applications of the VP0550N3-G are numerous. It is used as a low power amplifier, such as in audio applications, as a current source in battery-operated devices and in applications such as high frequency switching in power supplies. It is also used in digital oscillators and in analog processing circuits. In addition, the VP0550N3-G can be used as a switch for power circuitry.
The working principle of the VP0550N3-G is based on the operation of the MOSFET. The MOSFET is made of two semiconductor layers, the source and the drain. When a voltage is applied across the source and the drain, electrons move from the source to the drain due to a potential barrier called the potential wells. This motion of electrons causes a current to flow from the source to the drain. The amount of current that is controlled depends on the magnitude of the voltage applied across the source and the drain.
The VP0550N3-G also has a gate which is connected to the source and the drain. The gate acts as a control element, controlling the current flow between the source and the drain. When a voltage is applied to the gate, it becomes charged and changes the potential wells between the source and the drain, allowing the current to flow or blocking it. This property of the gate is the basis for the operation of the VP 0550N3-G as an amplifier.
In summary, the VP0550N3-G is a type of single polarity MOSFET which is used as an amplifier. It has numerous applications in audio applications, battery-operated devices, power supplies and many other circuits. The working principle of the device is based on the properties of the MOSFET and its ability to control current flow between the source and the drain.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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VP0550N3-G | Microchip Te... | -- | 973 | MOSFET P-CH 500V 0.054A T... |
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