VP2110K1-G Discrete Semiconductor Products

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VP2110K1-G, which belongs to transistors - FETs, MOSFETs - Single, is a high current FET power switch. It features high current handling capability of up to 11.7A, low on-state resistance of 75mΩ, protected by over-current protection, over-temperature protection and under-voltage lockout. The device is suitable for automotive and industrial applications, such as load holding, power factor correction and power switching.

The VP2110K1-G has a threshold voltage of 3.1V, drain current of 11.7A, gate charge of 0.99nC and on-state resistance of 75mΩ. It is available in a TO-220-3L power package with an exposed pad to cover a wide range of automotive and industrial applications. The device is also RoHS compliant and has a junction temperature range from -55°C to +150°C.

The VP2110K1-G offers protection against over-current, over-temperature, and under-voltage lock. These protection features are designed to prevent unnecessary damage of the device due to an overload or fault condition. The device also features a built-in hysteresis of 14V which keeps the device in a safer operating condition during power fluctuations and transient operations. Moreover, it is designed with an ultra-low on-resistance to ensure efficient power delivery, which makes it suitable for power switching and load holding applications.

The working principle of VP2110K1-G is based on the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). A MOSFET is a voltage-controlled and unipolar device consisting of two terminals, the source and the drain. The source is connected to the gate and the drain is connected to the load. The device controls the current flow between the source and the drain by applying a voltage to the gate. The higher the gate voltage, the greater the current flow and the lower the gate voltage, the lower the current flow. Therefore, when the VP2110K1-G is used in power switching applications, it can be used to control the current between the source and the drain, making it suitable for controlling power to various loads.

In conclusion, the VP2110K1-G is a high current FET power switch that is designed to work over a wide range of voltages. It is suitable for automotive and industrial applications, such as load holding, power factor correction and power switching. It features over-current protection, over-temperature protection, under-voltage lock-out and hysteresis of 14V. It is RoHS compliant and has an ultra-low on-state resistance ensuring efficient power delivery. The device is based on the MOSFET principle, being a voltage-controlled and unipolar device.

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