Allicdata Part #: | VP2206N2-ND |
Manufacturer Part#: |
VP2206N2 |
Price: | $ 9.36 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET P-CH 60V 750MA 3TO-39 |
More Detail: | P-Channel 60V 750mA (Tj) 360mW (Tc) Through Hole T... |
DataSheet: | VP2206N2 Datasheet/PDF |
Quantity: | 532 |
1 +: | $ 8.50500 |
25 +: | $ 7.79716 |
100 +: | $ 7.57659 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 750mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 900 mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 10mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 360mW (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-39 |
Package / Case: | TO-205AD, TO-39-3 Metal Can |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The VP2206N2 is a highly reliable, off-chip N-Channel MOSFET that ensures efficient power transfer in various applications. It consists of two independent N-Channel MOSFETs; a 5A, 20V and a 1A, 20V MOSFET. It is well suited for switch mode power supply, DC-DC converters, audio switching, fan control and soft-start applications.
The VP2206N2 offers the user a wide range of options of N-Channel MOSFETs that can be utilized in various areas. Its robust device structure based on advanced planar technology is ideal for high frequency operation, high linear operation and low power consumption. The ultimate goal is to ensure high reliability in each switching operation.
The N-Channel MOSFET transistors are the ideal choice for applications that demand low resistance, low drive voltage, low switching speed and low thermal-impedance. The VP2206N2 device is designed to provide all of these features, making it the ideal choice for many applications.
The VP2206N2 is capable of achieving a maximum on-resistance (RDS(on)) of 0.5 Ohm at 10V and 0.3 Ohm at 4.5V, resulting in a very low on-state resistance. This makes the VP2206N2 particularly suitable for applications that require a low on-state resistance and low drive voltage. Additionally, the device has a low gate charge of 4.2nC and a low reverse drain-source leakage current of 0.1uA, which results in improved circuit efficiency.
The working principle of the VP2206N2 is based on the basic principle of a MOSFET transistor. When a voltage is applied to the gate electrode, it causes a cumulative effect on the MOSFET, which modifies the conductivity of the N-Channel through a channel region and from the channel region to the drain terminal. The channel region has two main components, the Source and Drain, which selectively enable or disable current flow. In the VP2206N2, the on-resistance of the device is modulated by the voltage applied to the gate. This allows the device to control the flow of current into or out of the channel region.
The VP2206N2 is designed for high-frequency switching applications, such as for pulse width modulation, or for controlling the speed of a fan or a DC motor. In these applications, it can reduce the size and power consumption of the circuit, and can also improve efficiency by eliminating power losses in the switching circuit.
The VP2206N2 is also used in DC-DC converter applications, providing great performance while using very little power. It can provide up to 10A of output current and operate at switch frequencies of up to 500KHz. Additionally, its low insertion loss, low Vce(on), low Rdson and low leakage result in improved performance and higher efficiency.
The VP2206N2 is also a great device for audio applications, offering enhanced sound quality, improved signal-to-noise ratio and low distortion. The device can operate at frequencies of up to 10MHz and its low insertion loss and low Rdson result in improved noise immunity and better sound reproduction. Additionally, its low gate charge ensures improved power management.
The VP2206N2 is also an ideal choice for soft-start applications, providing a reliable and adjustable startup sequence without the need for separate components. This device has a low gate voltage and an adjustable idle current, making it suitable for a range of applications.
The VP2206N2 is a reliable and versatile device that can be used for a variety of applications requiring efficient power transfer. It offers reliable and low-power operation, and provides excellent performance and reliability in each application.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
VP2206N2 | Microchip Te... | 9.36 $ | 532 | MOSFET P-CH 60V 750MA 3TO... |
VP2206N3-G | Microchip Te... | 1.36 $ | 1181 | MOSFET P-CH 60V 640MA TO9... |
A-TB116-VP22 | ASSMANN WSW ... | 12.53 $ | 1000 | TERMINAL BLOCK22 Position... |
VP2206N3-G-P003 | Microchip Te... | 1.09 $ | 1000 | MOSFET P-CH 60V 640MA TO9... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...