Allicdata Part #: | VP3203N3-G-ND |
Manufacturer Part#: |
VP3203N3-G |
Price: | $ 0.98 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET P-CH 30V 650MA TO92-3 |
More Detail: | P-Channel 30V 650mA (Tj) 740mW (Ta) Through Hole T... |
DataSheet: | VP3203N3-G Datasheet/PDF |
Quantity: | 1326 |
1 +: | $ 0.88830 |
25 +: | $ 0.73987 |
100 +: | $ 0.67486 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 650mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 10mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 300pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 740mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-92-3 |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
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The VP3203N3-G is a single, N-channel, vertical, MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). It is a semiconductor device commonly found in high power electronic circuits. The MOSFET is an electronic device that is used to control the flow of current in a circuit. It works by controlling the voltage between its gates, source and drain. This allows it to act as a switch or a current regulator depending on the configuration of the circuit. The VP3203N3-G is a vertical MOSFET that has a peak drain current of 20 Amps and a peak drain-source voltage of up to 350 Volts.
The VP3203N3-G is typically used in applications requiring high-power switching such as those found in automotive and industrial controls, instrumentation amplifiers, switched-mode power supplies, and solar panels. Operating at high frequencies, the VP3203N3-G can be used to switch power efficiently in power inverters and dc-to-dc converters. Furthermore, the internal drain-source ESD protection of the VP3203N3-G makes it suitable for use in high-frequency circuits where electrostatic charging and discharging can cause damage to the circuit.
The VP3203N3-G works on the principle of the transistor effect. A transistor is a three-terminal device, composed of a source, a gate and a drain. The gate is the circuit control element and it is used to control the amount of current that flows from the source to the drain. The transistor is an active device, which means it can amplify an input signal. This is achieved by controlling the amount of current that flows from the source to the drain. The amount of current flowing is determined by the voltage applied to the gate. By controlling the gate voltage, the VP3203N3-G can be used to control the amount of current flowing in a circuit.
The VP3203N3-G is also available with an optional built-in protection diode. The protection diode protects the device against inductive kickback voltage, which is generated when the MOSFET is switching off. This built-in diode significantly reduces the overall system power loss. The VP3203N3-GM is also available with a Schottky diode. Schottky diodes can help reduce the power loss in switching circuits because they have a low forward voltage drop. In addition, they also have a fast switching speed.
The VP3203N3-G is an ideal device for power supply circuits in general, and specifically for automotive and industrial applications. The device is fully qualified for operation in ambient temperatures that range from -55C to 150C, which makes it suitable for harsh environment applications. With its high current-handling capability and low on-resistance, the VP3203N3-G is ideal for applications that require efficient power management.
The specific data is subject to PDF, and the above content is for reference
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