Allicdata Part #: | VQ1004P-ND |
Manufacturer Part#: |
VQ1004P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V 0.4A TO-205 |
More Detail: | MOSFET N-CH 60V 0.4A TO-205 |
DataSheet: | VQ1004P Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | -- |
Part Status: | Obsolete |
FET Type: | -- |
Technology: | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | ±20V |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | -- |
Supplier Device Package: | -- |
Package / Case: | -- |
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VQ1004P is a type of Field Effect Transistor, often referred to as an FET or MOSFET (metal oxide semiconductor field effect transistor). It is a single transistor and is applied to a wide variety of amplifying, measuring, and controlling applications because of its particular characteristics. It is most often used in the design of analog signals and in power control.
Application Fields for VQ1004P Transistor
The VQ1004P transistor is highly versatile as it has a number of application fields. Firstly, it is commonly utilised in the power control domain, such as voltage regulators and motor controllers, due to its high power (as high as 110 Watts). Its ability to be operated with low power but highly efficient, makes it a preferred choice in this field. Additionally, the VQ1004P integrated circuit (IC) is applied to radio-frequency (RF) signal amplifying due to its low power consumption, wideband range, and high linearity and gain. Other applications of VQ1004P include digital signal processor, power conversion, and high frequency communication. Despite being a single switch, it is capable of competing with double switches, like double FETs, concerning output/input impedance, power dissipation, and high frequency performance.
Working Principle of VQ1004P Transistor
The working principle of VQ1004P is basically the same as that of other transistors. The transistor contains three different layers of semiconductor material, such as silicon, each of which is specifically doped for specific purposes. In a VQ1004P, two of these layers are heavily doped, and the third layer is lightly doped. This third layer is known as the “gate”. When a voltage is applied to the gate, it attracts electrons from either the source or the drain, depending on the direction of the voltage supplied, thus creating a conducting channel between them.
In addition to the gate voltage, VQ1004P also uses a substrate bias voltage, which is applied to the lightly doped layer in order to enable the transistor to operate with low current levels. Furthermore, VQ1004P has voltage taps, which enable its operation at different operating points, without any drastic variation in the turn-on delay from one operating point to the other. The voltage taps provide a “linearization” effect over its operation.
Conclusion
The VQ1004P transistor is a highly versatile and robust single FET or MOSFET. It has a myriad of application fields, most notably power control and analog signal applications. Its unique characteristics make it an ideal solution for a number of uses, from voltage regulators to RF signal amplifications. Moreover, it is rather easy to use because of its low power consumption and linearization effect provided by its voltage taps. Therefore, the VQ1004P transistor can be a great solution for many different types of applications.
The specific data is subject to PDF, and the above content is for reference
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