Allicdata Part #: | W971GG6KB-18TR-ND |
Manufacturer Part#: |
W971GG6KB-18 TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Winbond Electronics |
Short Description: | IC DRAM 1G PARALLEL 84WBGA |
More Detail: | SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 533... |
DataSheet: | W971GG6KB-18 TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR2 |
Memory Size: | 1Gb (64M x 16) |
Clock Frequency: | 533MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 350ps |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Operating Temperature: | 0°C ~ 85°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 84-TFBGA |
Supplier Device Package: | 84-WBGA (8x12.5) |
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Memory
The W971GG6KB-18 TR has many potential applications as it is a memory device, and has the capability to store data reliably. The European Computer Industry (EPCI) has classified the W971GG6KB-18 TR as a type of Static Random Access Memory (SRAM) technology. In this article, we will discuss the application field and working principle of the W971GG6KB-18 TR.
Application Field
The W971GG6KB-18 TR is used in a variety of industries that require reliable data storage. Its SRAM technology excels in situations where data must be accessed instantly, as the device does not require time to retrieve data like other memory technologies. From the automotive, industrial and aerospace sectors to telecommunications and image processing, the W971GG6KB-18 TR provides a reliable, low-endurance way of data storage. The device has also featured prominently in small household, hobby and office applications.
Working Principle
SRAM works by tracking and storing data across a large number of memory cells, and includes a matrix of transistors and capacitors to collect, store and transfer data. The W971GG6KB-18 TR is able to store 8KB of data in its cells. The two primary parts of an SRAM memory cell are the pass gate and the cross-coupled inverter. The pass gate computes the logic function by controlling the flow of current, while the inverters are used to store the data.
The flow of current and the value of the stored data depend upon the logical function of the device. If the function is set to logic 0, current flows through the pass gate and to the capacitor, entering the input side and leaving through the output side. In this case, the stored data is 1. If the logical function is set to logic 1, the current does not flow through the pass gate, and the data stored is 0.
The transistors form the base of an SRAM memory cell, and work to store the logical state of the cell. As the transistors are cross-coupled, the current flowing through one will cause the reverse current to flow through the other. This logic can be used to store and retrieve data from an SRAM memory cell, including the W971GG6KB-18 TR. In addition, the W971GG6KB-18 TR is able to transfer data reliably and quickly due to its use of a dedicated bus.
Conclusion
The W971GG6KB-18 TR is an advanced SRAM technology, offering high-speed data transfer and reliable storage capabilities. The device is suitable for a wide range of applications, including those in the automotive, industrial and aerospace sectors, as well as telecommunications and image processing. In addition, its ability to provide quick and reliable data storage is an asset in small household, hobby and office applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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W9712G6KB-25 | Winbond Elec... | -- | 213 | IC DRAM 128M PARALLEL 84T... |
W971GG6SB-25 TR | Winbond Elec... | 2.55 $ | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG6SB-25 | Winbond Elec... | -- | 1439 | IC DRAM 1G PARALLEL 84WBG... |
W971GG6SB25I | Winbond Elec... | -- | 459 | IC DRAM 1G PARALLEL 84WBG... |
W971GG6SB-18 | Winbond Elec... | -- | 791 | IC DRAM 1G PARALLEL 84WBG... |
W971GG8SB-25 | Winbond Elec... | -- | 133 | IC DRAM 1G PARALLEL 60WBG... |
W971GG6KB-18 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG6KB-25 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG6KB25I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG8KB-25 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W971GG8KB25I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W971GG8JB-25 | Winbond Elec... | -- | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W971GG6KB-18 | Winbond Elec... | -- | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG6KB-25 | Winbond Elec... | -- | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG6KB25I | Winbond Elec... | -- | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG8KB-25 | Winbond Elec... | -- | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W971GG8KB25I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W971GG8JB25I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W9712G6KB-25 TR | Winbond Elec... | 1.3 $ | 1000 | IC DRAM 128M PARALLEL 84T... |
W9712G6KB25I TR | Winbond Elec... | 1.65 $ | 1000 | IC DRAM 128M PARALLEL 84T... |
W9712G6KB25I | Winbond Elec... | 1.82 $ | 1000 | IC DRAM 128M PARALLEL 84T... |
W971GG6SB-18 TR | Winbond Elec... | 2.55 $ | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG8SB-25 TR | Winbond Elec... | 2.55 $ | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W971GG8SB25I | Winbond Elec... | -- | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W971GG6SB25I TR | Winbond Elec... | 3.12 $ | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG8SB25I TR | Winbond Elec... | 3.12 $ | 1000 | IC DRAM 1G PARALLEL 60WBG... |
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