Allicdata Part #: | W971GG8SB25ITR-ND |
Manufacturer Part#: |
W971GG8SB25I TR |
Price: | $ 3.12 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Winbond Electronics |
Short Description: | IC DRAM 1G PARALLEL 60WBGA |
More Detail: | SDRAM - DDR2 Memory IC 1Gb (128M x 8) Parallel 200... |
DataSheet: | W971GG8SB25I TR Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 2.83025 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR2 |
Memory Size: | 1Gb (128M x 8) |
Clock Frequency: | 200MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 400ps |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Operating Temperature: | -40°C ~ 95°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 60-TFBGA |
Supplier Device Package: | 60-WBGA (8x12.5) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory
W971GG8SB25I TR Application Field and Working Principle
W971GG8SB25I TR is a high-speed synchronous DRAM (SDRAM) device, with a maximum data transfer rate of 2533MT/s. It is mainly used in high-end servers, workstations, and advanced embedded applications. The W971GG8SB25I TR offers superior performance and scalability to meet the demands of high-performance enterprise and consumer applications. In this article, we will take a look at the application field and working principle of W971GG8SB25I TR.
Application Field
W971GG8SB25I TR is a high-speed synchronous DRAM (SDRAM) device. It is mainly used for high-end server and workstation applications, as well as advanced embedded applications. W971GG8SB25I TR delivers superior performances with a wide range of capabilities, including high-end single-channel and dual-channel support, high-level of scalability, improved performance per watt, and low total cost of ownership. Furthermore, it also provides enhanced throughput and reliability when compared to traditional DRAM products.
W971GG8SB25I TR is designed to provide the best performance in server and workstation applications. It supports up to 128GB of ECC-protected DDR4 SDRAM at a maximum data transfer rate of 2533MT/s. It has a low-power architecture and provides enhanced performance per watt and improved memory scalability. Furthermore, W971GG8SB25I TR also supports advanced Error Correction Code (ECC) technologies to enhance system reliability and availability.
In addition, the W971GG8SB25I TR is also widely used in advanced embedded applications. It supports up to 32GB of Open Memory Interface (OMI) DDR4 SDRAM with a maximum data transfer rate of 2533MT/s. The OMI interface ensures the compatibility with embedded processor systems and provides a low-power, low-latency architecture to maximize performance and scalability in applications such as automotive, industrial, and aerospace.
Working Principle
The working principle of W971GG8SB25I TR is based on Synchronous Dynamic Random Access Memory (SDRAM). In this type of memory, the CPU and RAM communicate with each other in a synchronous manner. This means that data is always available at a predictable time, making it easier to store, retrieve and access the data.
The W971GG8SB25I TR is based on an advanced memory architecture featuring high performance registers, low-latency burst transfers, and advanced ECC technologies. This helps to provide maximum system performance, scalability, and reliability. The device also offers on-die termination for improved signal integrity, as well as improved thermal and power efficiency compared to traditional DRAM.
W971GG8SB25I TR utilizes a wide range of advanced features to provide superior performance, scalability, and reliability. These features include high-speed single- and dual-channel support, on-die termination, enhanced ECC technologies, and low-power, low-latency architecture. Furthermore, the device also supports DDR4 SDRAM with an ultra-high-speed transfer rate of up to 2533MT/s.
Conclusion
The W971GG8SB25I TR is a high-speed synchronous DRAM (SDRAM) device and is mainly used in high-end servers, workstations, and advanced embedded applications. It is designed to provide the best performance in server and workstation applications and offers enhanced throughput and reliability when compared to traditional DRAM products. The device utilizes a wide range of advanced features such as high-speed single- and dual-channel support and on-die termination to provide superior performance, scalability, and reliability. Furthermore, the device also supports DDR4 SDRAM with an ultra-high-speed transfer rate of up to 2533MT/s.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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W9712G6KB-25 | Winbond Elec... | -- | 213 | IC DRAM 128M PARALLEL 84T... |
W971GG6SB-25 TR | Winbond Elec... | 2.55 $ | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG6SB-25 | Winbond Elec... | -- | 1439 | IC DRAM 1G PARALLEL 84WBG... |
W971GG6SB25I | Winbond Elec... | -- | 459 | IC DRAM 1G PARALLEL 84WBG... |
W971GG6SB-18 | Winbond Elec... | -- | 791 | IC DRAM 1G PARALLEL 84WBG... |
W971GG8SB-25 | Winbond Elec... | -- | 133 | IC DRAM 1G PARALLEL 60WBG... |
W971GG6KB-18 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG6KB-25 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG6KB25I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG8KB-25 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W971GG8KB25I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W971GG8JB-25 | Winbond Elec... | -- | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W971GG6KB-18 | Winbond Elec... | -- | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG6KB-25 | Winbond Elec... | -- | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG6KB25I | Winbond Elec... | -- | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG8KB-25 | Winbond Elec... | -- | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W971GG8KB25I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W971GG8JB25I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W9712G6KB-25 TR | Winbond Elec... | 1.3 $ | 1000 | IC DRAM 128M PARALLEL 84T... |
W9712G6KB25I TR | Winbond Elec... | 1.65 $ | 1000 | IC DRAM 128M PARALLEL 84T... |
W9712G6KB25I | Winbond Elec... | 1.82 $ | 1000 | IC DRAM 128M PARALLEL 84T... |
W971GG6SB-18 TR | Winbond Elec... | 2.55 $ | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG8SB-25 TR | Winbond Elec... | 2.55 $ | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W971GG8SB25I | Winbond Elec... | -- | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W971GG6SB25I TR | Winbond Elec... | 3.12 $ | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG8SB25I TR | Winbond Elec... | 3.12 $ | 1000 | IC DRAM 1G PARALLEL 60WBG... |
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