W971GG6SB-18 Allicdata Electronics
Allicdata Part #:

W971GG6SB-18-ND

Manufacturer Part#:

W971GG6SB-18

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Winbond Electronics
Short Description: IC DRAM 1G PARALLEL 84WBGA
More Detail: SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 533...
DataSheet: W971GG6SB-18 datasheetW971GG6SB-18 Datasheet/PDF
Quantity: 791
Stock 791Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (64M x 16)
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 350ps
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-WBGA (8x12.5)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is a critical element for almost all computing applications. The capacity of computers today and their ability to efficiently store and process tremendous amounts of data depends upon the memory technology used. W971GG6SB-18 is a high-density memory module that is used in various types of computing applications.

W971GG6SB-18 is a high-density memory module from Samsung. It is designed for mobile, desktop, and laptop applications. This memory module features a DDR3 architecture and a double-data-rate (DDR) transfer rate of 1866MHz. It is compatible with most x86 and x64 processor platforms. This module is composed of four 6GBp/s cache lines and provides up to 24GB/s of total data throughput. It also supports unbuffered, registered, and error-correcting code (ECC) memory operations.

The W971GG6SB-18 is a Dual Inline Memory Module (DIMM) and utilizes a 240-pin edge connector, providing a direct connection to the processor. This type of memory is ideal for heavy duty applications, such as server applications and video editing. The module also has two sets of memory addresses- a primary and a secondary- both of which are used to store data and instructions. The primary address is used to store data and instructions more quickly, while the secondary address is mainly used for program memory.

The W971GG6SB-18 is a synchronous dynamic RAM (SDRAM) device. Its primary functions are to store data and control the flow of data between the CPU and other components. Its synchronous design means that the chip is synchronized with the processor’s clock speed, allowing it to process different types of data faster. The chip also features error detection and correction (EDC) capabilities, which help protect against data corruption.

The W971GG6SB-18 is used mainly in high-performance applications where speed, flexibility, and reliability are of the utmost importance. It is used in a variety of computing applications, including but not limited to, gaming, software development, server applications, scientific research, video editing, and more. It is a reliable and efficient form of memory storage that can handle heavy loads and provide excellent performance.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "W971" Included word is 26
Part Number Manufacturer Price Quantity Description
W9712G6KB-25 Winbond Elec... -- 213 IC DRAM 128M PARALLEL 84T...
W971GG6SB-25 TR Winbond Elec... 2.55 $ 1000 IC DRAM 1G PARALLEL 84WBG...
W971GG6SB-25 Winbond Elec... -- 1439 IC DRAM 1G PARALLEL 84WBG...
W971GG6SB25I Winbond Elec... -- 459 IC DRAM 1G PARALLEL 84WBG...
W971GG6SB-18 Winbond Elec... -- 791 IC DRAM 1G PARALLEL 84WBG...
W971GG8SB-25 Winbond Elec... -- 133 IC DRAM 1G PARALLEL 60WBG...
W971GG6KB-18 TR Winbond Elec... 0.0 $ 1000 IC DRAM 1G PARALLEL 84WBG...
W971GG6KB-25 TR Winbond Elec... 0.0 $ 1000 IC DRAM 1G PARALLEL 84WBG...
W971GG6KB25I TR Winbond Elec... 0.0 $ 1000 IC DRAM 1G PARALLEL 84WBG...
W971GG8KB-25 TR Winbond Elec... 0.0 $ 1000 IC DRAM 1G PARALLEL 60WBG...
W971GG8KB25I TR Winbond Elec... 0.0 $ 1000 IC DRAM 1G PARALLEL 60WBG...
W971GG8JB-25 Winbond Elec... -- 1000 IC DRAM 1G PARALLEL 60WBG...
W971GG6KB-18 Winbond Elec... -- 1000 IC DRAM 1G PARALLEL 84WBG...
W971GG6KB-25 Winbond Elec... -- 1000 IC DRAM 1G PARALLEL 84WBG...
W971GG6KB25I Winbond Elec... -- 1000 IC DRAM 1G PARALLEL 84WBG...
W971GG8KB-25 Winbond Elec... -- 1000 IC DRAM 1G PARALLEL 60WBG...
W971GG8KB25I Winbond Elec... 0.0 $ 1000 IC DRAM 1G PARALLEL 60WBG...
W971GG8JB25I Winbond Elec... 0.0 $ 1000 IC DRAM 1G PARALLEL 60WBG...
W9712G6KB-25 TR Winbond Elec... 1.3 $ 1000 IC DRAM 128M PARALLEL 84T...
W9712G6KB25I TR Winbond Elec... 1.65 $ 1000 IC DRAM 128M PARALLEL 84T...
W9712G6KB25I Winbond Elec... 1.82 $ 1000 IC DRAM 128M PARALLEL 84T...
W971GG6SB-18 TR Winbond Elec... 2.55 $ 1000 IC DRAM 1G PARALLEL 84WBG...
W971GG8SB-25 TR Winbond Elec... 2.55 $ 1000 IC DRAM 1G PARALLEL 60WBG...
W971GG8SB25I Winbond Elec... -- 1000 IC DRAM 1G PARALLEL 60WBG...
W971GG6SB25I TR Winbond Elec... 3.12 $ 1000 IC DRAM 1G PARALLEL 84WBG...
W971GG8SB25I TR Winbond Elec... 3.12 $ 1000 IC DRAM 1G PARALLEL 60WBG...
Latest Products
MT53D512M64D4NZ-053 WT ES...

IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

MT53D512M64D4NZ-053 WT ES:D TR Allicdata Electronics
ECF620AAACN-C1-Y3-ES

LPDDR3 6G DIE 192MX32Memory IC

ECF620AAACN-C1-Y3-ES Allicdata Electronics
MT53B384M64D4NK-053 WT ES...

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

MT53B384M64D4NK-053 WT ES:B Allicdata Electronics
70V25S45J

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

70V25S45J Allicdata Electronics
71321LA55JI8

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

71321LA55JI8 Allicdata Electronics
7027L55PFI8

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...

7027L55PFI8 Allicdata Electronics