Allicdata Part #: | W971GG8JB25I-ND |
Manufacturer Part#: |
W971GG8JB25I |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Winbond Electronics |
Short Description: | IC DRAM 1G PARALLEL 60WBGA |
More Detail: | SDRAM - DDR2 Memory IC 1Gb (128M x 8) Parallel 200... |
DataSheet: | W971GG8JB25I Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR2 |
Memory Size: | 1Gb (128M x 8) |
Clock Frequency: | 200MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 400ps |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Operating Temperature: | -40°C ~ 95°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 60-TFBGA |
Supplier Device Package: | 60-WBGA (8x12.5) |
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Introduction
The W971GG8JB25I is a type of memory storage device that utilizes non-volatile NAND flash memory in order to store and retrieve data without any power supply. It is commonly used in mobile devices, such as smartphones and tablets, as well as other embedded systems, especially those where power and space are limited.
Application Field
The W971GG8JB25I memory can be utilized in a broad range of applications, such as electronic gadgets, wearables, automotive systems, industrial memory, and even in space exploration. This makes it a particularly versatile type of memory and an excellent choice for applications with demanding requirements in terms of size and power.
Some of the main areas of application of the W971GG8JB25I include digital cameras and camcorders, as well as gaming consoles, navigation systems, and other consumer products. The device\'s ability to easily interface with existing hardware and its small footprint make it the ideal choice for systems where space is a major consideration.
Working Principle
Since the W971GG8JB25I is a type of non-volatile memory, it does not require an external power source to store and retrieve data. Instead, it takes advantage of the NAND flash architecture to keep data stored. This is done by applying a negative voltage to the gates within the memory cell, which repels electrons away from the substrate and towards the silicon oxide in the surrounding insulation layers.
To read from the memory, the device utilizes a floating gate transistor, which allows a current to flow from the substrate to the drain. When the voltage is applied, the current switches between being stored in the source and the drain, thereby allowing for the data to be read. Similarly, when the device needs to write data, the same transistor is used to change the voltage of the source in order to store or retrieve the desired information.
Conclusion
The W971GG8JB25I is a type of non-volatile NAND flash memory, widely used in a variety of applications due to its small footprint and easy integration. It utilizes a negative voltage to repel electrons away from the substrate, as well as a floating gate transistor in order to read and write data, making it a reliable and efficient choice for a range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
W9712G6KB-25 | Winbond Elec... | -- | 213 | IC DRAM 128M PARALLEL 84T... |
W971GG6SB-25 TR | Winbond Elec... | 2.55 $ | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG6SB-25 | Winbond Elec... | -- | 1439 | IC DRAM 1G PARALLEL 84WBG... |
W971GG6SB25I | Winbond Elec... | -- | 459 | IC DRAM 1G PARALLEL 84WBG... |
W971GG6SB-18 | Winbond Elec... | -- | 791 | IC DRAM 1G PARALLEL 84WBG... |
W971GG8SB-25 | Winbond Elec... | -- | 133 | IC DRAM 1G PARALLEL 60WBG... |
W971GG6KB-18 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG6KB-25 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG6KB25I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG8KB-25 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W971GG8KB25I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W971GG8JB-25 | Winbond Elec... | -- | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W971GG6KB-18 | Winbond Elec... | -- | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG6KB-25 | Winbond Elec... | -- | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG6KB25I | Winbond Elec... | -- | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG8KB-25 | Winbond Elec... | -- | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W971GG8KB25I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W971GG8JB25I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W9712G6KB-25 TR | Winbond Elec... | 1.3 $ | 1000 | IC DRAM 128M PARALLEL 84T... |
W9712G6KB25I TR | Winbond Elec... | 1.65 $ | 1000 | IC DRAM 128M PARALLEL 84T... |
W9712G6KB25I | Winbond Elec... | 1.82 $ | 1000 | IC DRAM 128M PARALLEL 84T... |
W971GG6SB-18 TR | Winbond Elec... | 2.55 $ | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG8SB-25 TR | Winbond Elec... | 2.55 $ | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W971GG8SB25I | Winbond Elec... | -- | 1000 | IC DRAM 1G PARALLEL 60WBG... |
W971GG6SB25I TR | Winbond Elec... | 3.12 $ | 1000 | IC DRAM 1G PARALLEL 84WBG... |
W971GG8SB25I TR | Winbond Elec... | 3.12 $ | 1000 | IC DRAM 1G PARALLEL 60WBG... |
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