W971GG6SB-18 TR Allicdata Electronics
Allicdata Part #:

W971GG6SB-18TR-ND

Manufacturer Part#:

W971GG6SB-18 TR

Price: $ 2.55
Product Category:

Integrated Circuits (ICs)

Manufacturer: Winbond Electronics
Short Description: IC DRAM 1G PARALLEL 84WBGA
More Detail: SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 533...
DataSheet: W971GG6SB-18 TR datasheetW971GG6SB-18 TR Datasheet/PDF
Quantity: 1000
2500 +: $ 2.30931
Stock 1000Can Ship Immediately
$ 2.55
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (64M x 16)
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 350ps
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-WBGA (8x12.5)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The W971GG6SB-18 TR memory is a type of memory designed for use in non-volatile memory storage devices that utilizes the latest storage technology. This type of memory provides users with a secure and reliable way of storing data without the need for an external power source. This type of memory is also known as a Triple Level Cell (TLC) memory.The W971GG6SB-18 TR memory utilizes a special type of NAND Flash technology that allows it to store three bits of information in a single cell. This type of memory provides greater storage capacity and faster access times than traditional single or double level cell technologies. It is also a more reliable form of memory as it is more resistant to wear and tear and less prone to data errors.The W971GG6SB-18 TR memory is used in a wide variety of digital products, including smartphones, digital cameras, personal computers and tablets. The memory provides users with a secure and reliable way of storing data without the need for an external power source. This makes it a great choice for applications such as digital media storage, file sharing, digital document storage and gaming.The working principle of W971GG6SB-18 TR memory is based on the way information is stored in flash memory. It works by using a set of two transistors as part of a circuit. When one of the transistors is turned off, the other one is turned on, which allows the memory cell to store a single bit of data. When the transistor is turned on, the other is turned off and the cell stores the next bit. This process is repeated for the three bits of data stored within each memory cell.The W971GG6SB-18 TR memory is designed for use in non-volatile memory storage devices and is highly reliable, secure, and capable of storing large amounts of data. The memory also provides users with a secure and reliable way of storing data without the need for an external power source. This makes it a great choice for applications such as digital media storage, file sharing, digital document storage and gaming.Overall, the W971GG6SB-18 TR memory is a great choice for those who need a secure and reliable way of storing data. This type of memory is also more reliable than traditional memory technologies, less prone to errors, and provides a great amount of capacity and faster access times.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "W971" Included word is 26
Part Number Manufacturer Price Quantity Description
W9712G6KB-25 Winbond Elec... -- 213 IC DRAM 128M PARALLEL 84T...
W971GG6SB-25 TR Winbond Elec... 2.55 $ 1000 IC DRAM 1G PARALLEL 84WBG...
W971GG6SB-25 Winbond Elec... -- 1439 IC DRAM 1G PARALLEL 84WBG...
W971GG6SB25I Winbond Elec... -- 459 IC DRAM 1G PARALLEL 84WBG...
W971GG6SB-18 Winbond Elec... -- 791 IC DRAM 1G PARALLEL 84WBG...
W971GG8SB-25 Winbond Elec... -- 133 IC DRAM 1G PARALLEL 60WBG...
W971GG6KB-18 TR Winbond Elec... 0.0 $ 1000 IC DRAM 1G PARALLEL 84WBG...
W971GG6KB-25 TR Winbond Elec... 0.0 $ 1000 IC DRAM 1G PARALLEL 84WBG...
W971GG6KB25I TR Winbond Elec... 0.0 $ 1000 IC DRAM 1G PARALLEL 84WBG...
W971GG8KB-25 TR Winbond Elec... 0.0 $ 1000 IC DRAM 1G PARALLEL 60WBG...
W971GG8KB25I TR Winbond Elec... 0.0 $ 1000 IC DRAM 1G PARALLEL 60WBG...
W971GG8JB-25 Winbond Elec... -- 1000 IC DRAM 1G PARALLEL 60WBG...
W971GG6KB-18 Winbond Elec... -- 1000 IC DRAM 1G PARALLEL 84WBG...
W971GG6KB-25 Winbond Elec... -- 1000 IC DRAM 1G PARALLEL 84WBG...
W971GG6KB25I Winbond Elec... -- 1000 IC DRAM 1G PARALLEL 84WBG...
W971GG8KB-25 Winbond Elec... -- 1000 IC DRAM 1G PARALLEL 60WBG...
W971GG8KB25I Winbond Elec... 0.0 $ 1000 IC DRAM 1G PARALLEL 60WBG...
W971GG8JB25I Winbond Elec... 0.0 $ 1000 IC DRAM 1G PARALLEL 60WBG...
W9712G6KB-25 TR Winbond Elec... 1.3 $ 1000 IC DRAM 128M PARALLEL 84T...
W9712G6KB25I TR Winbond Elec... 1.65 $ 1000 IC DRAM 128M PARALLEL 84T...
W9712G6KB25I Winbond Elec... 1.82 $ 1000 IC DRAM 128M PARALLEL 84T...
W971GG6SB-18 TR Winbond Elec... 2.55 $ 1000 IC DRAM 1G PARALLEL 84WBG...
W971GG8SB-25 TR Winbond Elec... 2.55 $ 1000 IC DRAM 1G PARALLEL 60WBG...
W971GG8SB25I Winbond Elec... -- 1000 IC DRAM 1G PARALLEL 60WBG...
W971GG6SB25I TR Winbond Elec... 3.12 $ 1000 IC DRAM 1G PARALLEL 84WBG...
W971GG8SB25I TR Winbond Elec... 3.12 $ 1000 IC DRAM 1G PARALLEL 60WBG...
Latest Products
MT53D512M64D4NZ-053 WT ES...

IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

MT53D512M64D4NZ-053 WT ES:D TR Allicdata Electronics
ECF620AAACN-C1-Y3-ES

LPDDR3 6G DIE 192MX32Memory IC

ECF620AAACN-C1-Y3-ES Allicdata Electronics
MT53B384M64D4NK-053 WT ES...

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

MT53B384M64D4NK-053 WT ES:B Allicdata Electronics
70V25S45J

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

70V25S45J Allicdata Electronics
71321LA55JI8

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

71321LA55JI8 Allicdata Electronics
7027L55PFI8

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...

7027L55PFI8 Allicdata Electronics