WPH4003-1E

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The WPH4003-1E is an enhancement-mode (normally-off) Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is designed for power switching applications. This type of transistor is a voltage-controlled device and is made of two metal gates (source and drain electrodes) and a self-gate (gate).

The WPH4003-1E has low On-resistance (RDS_ON) and high-current handling capabilities, making it suitable for power switching applications. It offers a breakdown voltage (BVDSS) of 400V and an Ultra low RDS _ON, 2.8 mΩ typical (VGS = 10V). It also features an operating temperature range of -55°C to +150°C. These characteristics allow it to be used in wide range of applications, including automotive, industrial, and telecommunications.

Apart from low RDS _ON, the WPH4003-1E offers a variety of other advantages such as improved thermal resistance, controlled avalanche capability, and ESD robustness. Moreover, the transistor has an integrated protection diode, which helps protect the MOSFET against fast transients. This ensures the device remains secure and reliable during operations in a wide temperature range.

The WPH4003-1E application field includes a range of power switching, power supply, and lighting applications where high current needs to be switched on and off. These include high-current inductive loads, DC/DC converter, DC/AC inverter, stepper motor, and high efficiency LED drivers. The WPH4003-1E is suitable for environments operating at high temperature, such as automotive and high-power industrial applications. It can also be used in various telecom applications such as switching and power management.

The working principle of the WPH4003-1E is based on the metallic-insulator-semiconductor (MIS) structure that is used in field effect transistors (FET). This structure consists of a metal gate and a substrate. A voltage applied to the gate changes the flow of charge carriers (electrons and holes) between the source and drain regions. As the voltage on the gate increases, the electrostatic attraction between the gate and the substrate (channel) increases, increasing the number of charge carriers in the channel, and decreasing the resistance between the source and drain (RDS_ON). This has the effect of turning the device on.

When the gate voltage is reversed, the electrostatic attraction between the gate and the substrate decreases, which decreases the number of charge carriers in the channel, and increases the resistance between the source and drain. This has the effect of turning the device off. This way, the WPH4003-1E can be used to switch high current with low power dissipation and low switching losses.

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