XN0NE9200L Discrete Semiconductor Products |
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| Allicdata Part #: | XN0NE9200LTR-ND |
| Manufacturer Part#: |
XN0NE9200L |
| Price: | $ 0.21 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Panasonic Electronic Components |
| Short Description: | MOSFET P-CH 12V 1.2A MINI-5P |
| More Detail: | P-Channel 12V 1.2A (Ta) 600mW (Ta) Surface Mount M... |
| DataSheet: |  XN0NE9200L Datasheet/PDF |
| Quantity: | 3000 |
| 3000 +: | $ 0.18730 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 12V |
| Current - Continuous Drain (Id) @ 25°C: | 1.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 4V |
| Rds On (Max) @ Id, Vgs: | 450 mOhm @ 800mA, 4V |
| Vgs(th) (Max) @ Id: | 1.3V @ 1mA |
| Vgs (Max): | ±15V |
| FET Feature: | Schottky Diode (Isolated) |
| Power Dissipation (Max): | 600mW (Ta) |
| Operating Temperature: | 125°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | Mini5-G1 |
| Package / Case: | SC-74A, SOT-753 |
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XN0NE9200L application field and working principle
The XN0NE9200L is a single enhancement-mode N-channel MOSFET. It’s mainly used in power management, power switching, and power supply applications. The XN0NE9200L is ideal for these applications because of its extremely low gate threshold voltage, high current handling capability, and low power losses, making it extremely efficient.
Features
The XN0NE9200L has a wide range of features, including:
- Extremely low gate threshold voltage (Vth) of -2V for a lower operating voltage.
- High current handling capability (up to 4A).
- High power efficiency.
- High pack‑to‑pack voltage variations.
- Low on‑state resistance for lower power losses.
- Low reverse transfer capacitance for higher switching speed.
Applications
The XN0NE9200L is mainly used in power management, power switching, and power supply applications. It is used in switching application such as DC-DC converters, AC-DC converters, etc. It is also used in battery management applications such as fuel cells, solar panels, and emergency power supplies. It is also used in automotive and aviation applications.
Working principle
The XN0NE9200L is an enhancement-mode N-channel MOSFET, which means that it requires an input voltage above the threshold voltage to be able to conduct current between the source and the drain. This is known as the “on” state. When the input voltage is below the threshold voltage, the MOSFET is said to be in the “off” state, and no current can flow between the source and the drain.
When the MOSFET is in the “on” state, the current flows from source to drain. This is known as “drain current” and is controlled by the voltage at the gate of the MOSFET, which is also known as “gate voltage”. The higher the gate voltage, the greater the drain current.
The MOSFET is also characterised by its “on‑state resistance” (RDSon), which is the resistance between the source and drain when the MOSFET is in the “on” state. The lower the on-state resistance, the lower the power losses and the greater the power efficiency of the MOSFET. The XN0NE9200L has a very low on-state resistance, making it extremely efficient and ideal for power management, power switching, and power supply applications.
Conclusion
The XN0NE9200L is a single enhancement-mode N-channel MOSFET, which is mainly used in power management, power switching, and power supply applications. It is characterized by its extremely low gate threshold voltage, high current handling capability, and low power losses, making it an ideal choice for these applications. The XN0NE9200L is also characterized by its low on‑state resistance for lower power losses and its reverse transfer capacitance for higher switching speed.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| XN0NE9200L | Panasonic El... | 0.21 $ | 3000 | MOSFET P-CH 12V 1.2A MINI... |
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