ZDS020N60TB Allicdata Electronics
Allicdata Part #:

ZDS020N60TB-ND

Manufacturer Part#:

ZDS020N60TB

Price: $ 0.36
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 600V 8SOIC
More Detail: N-Channel 600V 630mA (Tc) 2W (Tc) Surface Mount 8-...
DataSheet: ZDS020N60TB datasheetZDS020N60TB Datasheet/PDF
Quantity: 1000
2500 +: $ 0.32458
Stock 1000Can Ship Immediately
$ 0.36
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 630mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
FET Feature: --
Power Dissipation (Max): 2W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Description

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The ZDS020N60TB is a type of power MOSFETs, which stands for Metal Oxide Semiconductor Field Effect Transistor. This device belongs to a single power Transistor family, specifically Field Effect Transistors (FETs) and MOSFETs. These devices are used in power electronics related applications and its design enables superior performance than other power transistors.

It operates on a working principle known as the Enhancement Mode. This specific mode of operation involves the application of an external voltage signal, usually referred to as the Gate voltage, which is used to change the conductivity of the MOSFET. This Gate voltage is applied to a Gate control electrode, which is directly linked to the silicon substrate and serves as the input signal for operating the MOSFET.

The ZDS020N60TB is an excellent choice for a wide variety of power electronics applications. It operates in both linear and switch mode power electronics applications. In linear applications, the device is used for DC to DC converters, power supplies, motor drives, and amplifiers. In switch mode applications, it acts as a power switch and helps regulate the flow of power to various devices. It is also well-suited for digital logic applications, circuit protection and noise suppression.

The ZDS020N60TB is a capable device when compared to other MOSFETs, due to its high junction temperature and excellent RDS(on) specifications. The device is available in various packages, including TO-220 and TO-247, and is also supported by a range of heatsink options, making it suitable for use in various environments. It has excellent electrical characteristics with a guaranteed maximum junction temperature of 175°C and an RDS(on) of 0.020 Ω.

The usage of the ZDS020N60TB is usually quite simple, however, the user should take into consideration the recommended operation conditions to ensure the device runs reliably. The device can be operated up to 175°C of the maximum junction temperature, but it is not advised to exceed the values as it may cause damage to the device. It is also advised to properly clean the MOSFET to ensure that the soldering points are free from dust and dirt, as it may adversely affect the device’s performance.

To conclude, the ZDS020N60TB is an excellent choice for a wide variety of power electronic applications. The device offers great performance, due to its well-designed construction and excellent electrical specifications. It is available in multiple package types and is backed by a range of heatsink options, which allows it to be used in various environments. The device is easy to use with little experience needed, however, it is also recommended to take certain precautions while operating the device to ensure its desirable performance.

The specific data is subject to PDF, and the above content is for reference

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