Allicdata Part #: | ZDX080N50-ND |
Manufacturer Part#: |
ZDX080N50 |
Price: | $ 0.99 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 500V 8A TO220FM |
More Detail: | N-Channel 500V 8A (Tc) 40W (Tc) Through Hole TO-22... |
DataSheet: | ZDX080N50 Datasheet/PDF |
Quantity: | 432 |
1 +: | $ 0.90720 |
10 +: | $ 0.80199 |
100 +: | $ 0.63365 |
500 +: | $ 0.49143 |
1000 +: | $ 0.38797 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 850 mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1120pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 40W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220FM |
Package / Case: | TO-220-3 Full Pack |
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The ZDX080N50 is a single MOSFET with high-performance features. It is designed for a variety of applications, including high-FET integration, low-voltage operation, and low power consumption. The ZDX080N50 is also designed to operate at room temperature, making it suitable for most applications.
In electrical engineering, MOSFETs are transistors that operate by controlling the flow of electrons through a channel created by the layer of oxide between two silicon or other semiconductors. When a voltage is applied between the gate and the source, the electrons in the channel are drained and the current is controlled by the voltage applied. As the voltage at the gate increases, the cell capacitance increases and the current decreases.
The ZDX080N50 MOSFET has many advantages compared to other types of transistors. It has a much lower output capacitance, which helps reduce power consumption and allows for higher-speed operations. Additionally, the ZDX080N50 has a lower on-resistance than other types of transistors, which means it has higher efficiency and lower power consumption. The ZDX080N50 also offers a wide range of internal parameters for more accurate control over its operation.
The ZDX080N50 can be used in a wide range of applications, from consumer electronics, automotive, and medical, to data communications and industrial solutions. The device is typically used in low-power applications, such as switching of low-voltage analog or digital signals. A typical application of the ZDX080N50 is as a high-side switch in consumer electronics. The ZDX080N50 offers fast switching (minimizing disruption of the signal) as well as low leakage current.
The ZDX080N50 can also be used as a low-side switch, used in conjunction with a low-side external driver. This arrangement allows the MOSFET to be controlled accurately, while providing the maximum blocking voltage. This arrangement is especially useful in battery-powered applications, as the device can be used to control currents up to 500mA with very low power consumption.
The ZDX080N50 has a wide operating range, ideal for applications that require reliable performance at a variety of temperatures. The device is capable of operating at temperatures ranging from -55 to 125°C. This makes it ideal for use in automotive and industrial applications, where operating temperature can vary greatly.
Overall, the ZDX080N50 is an ideal choice for use in applications where high performance, low power consumption, and wide operating temperature range are required. It offers excellent features, such as high-FET integration, low-voltage operation, and low leakage current. The device is well-suited for many types of applications, such as consumer electronics, automotive, and medical, as well as data communications and industrial solutions.
The specific data is subject to PDF, and the above content is for reference
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