ZDX080N50 Allicdata Electronics
Allicdata Part #:

ZDX080N50-ND

Manufacturer Part#:

ZDX080N50

Price: $ 0.99
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 500V 8A TO220FM
More Detail: N-Channel 500V 8A (Tc) 40W (Tc) Through Hole TO-22...
DataSheet: ZDX080N50 datasheetZDX080N50 Datasheet/PDF
Quantity: 432
1 +: $ 0.90720
10 +: $ 0.80199
100 +: $ 0.63365
500 +: $ 0.49143
1000 +: $ 0.38797
Stock 432Can Ship Immediately
$ 0.99
Specifications
Series: --
Packaging: Bulk 
Part Status: Not For New Designs
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 25V
FET Feature: --
Power Dissipation (Max): 40W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FM
Package / Case: TO-220-3 Full Pack
Description

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The ZDX080N50 is a single MOSFET with high-performance features. It is designed for a variety of applications, including high-FET integration, low-voltage operation, and low power consumption. The ZDX080N50 is also designed to operate at room temperature, making it suitable for most applications.

In electrical engineering, MOSFETs are transistors that operate by controlling the flow of electrons through a channel created by the layer of oxide between two silicon or other semiconductors. When a voltage is applied between the gate and the source, the electrons in the channel are drained and the current is controlled by the voltage applied. As the voltage at the gate increases, the cell capacitance increases and the current decreases.

The ZDX080N50 MOSFET has many advantages compared to other types of transistors. It has a much lower output capacitance, which helps reduce power consumption and allows for higher-speed operations. Additionally, the ZDX080N50 has a lower on-resistance than other types of transistors, which means it has higher efficiency and lower power consumption. The ZDX080N50 also offers a wide range of internal parameters for more accurate control over its operation.

The ZDX080N50 can be used in a wide range of applications, from consumer electronics, automotive, and medical, to data communications and industrial solutions. The device is typically used in low-power applications, such as switching of low-voltage analog or digital signals. A typical application of the ZDX080N50 is as a high-side switch in consumer electronics. The ZDX080N50 offers fast switching (minimizing disruption of the signal) as well as low leakage current.

The ZDX080N50 can also be used as a low-side switch, used in conjunction with a low-side external driver. This arrangement allows the MOSFET to be controlled accurately, while providing the maximum blocking voltage. This arrangement is especially useful in battery-powered applications, as the device can be used to control currents up to 500mA with very low power consumption.

The ZDX080N50 has a wide operating range, ideal for applications that require reliable performance at a variety of temperatures. The device is capable of operating at temperatures ranging from -55 to 125°C. This makes it ideal for use in automotive and industrial applications, where operating temperature can vary greatly.

Overall, the ZDX080N50 is an ideal choice for use in applications where high performance, low power consumption, and wide operating temperature range are required. It offers excellent features, such as high-FET integration, low-voltage operation, and low leakage current. The device is well-suited for many types of applications, such as consumer electronics, automotive, and medical, as well as data communications and industrial solutions.

The specific data is subject to PDF, and the above content is for reference

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