ZDX130N50 Allicdata Electronics
Allicdata Part #:

ZDX130N50-ND

Manufacturer Part#:

ZDX130N50

Price: $ 1.26
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 500V 13A TO220FM
More Detail: N-Channel 500V 13A (Tc) 40W (Tc) Through Hole TO-2...
DataSheet: ZDX130N50 datasheetZDX130N50 Datasheet/PDF
Quantity: 4
1 +: $ 1.13400
Stock 4Can Ship Immediately
$ 1.26
Specifications
Series: --
Packaging: Bulk 
Part Status: Not For New Designs
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 520 mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 25V
FET Feature: --
Power Dissipation (Max): 40W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FM
Package / Case: TO-220-3 Full Pack
Description

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A ZDX130N50 is a MOSFET (metal-oxide-semiconductor field-effect transistor) that belongs to the single transistor family. MOSFETs utilize either a positive or negative voltage, which will transfer through the channel that exists between the drain and source leads. This bias voltage that is transferred will allow a current to pass, the magnitude of which depends on external field conditions.

Since the ZDX130N50 is part of the single MOSFET family, it is only composed of one individual transistor structure. The body structure of this MOSFET has an N-channel (commonly referred to as "universal channel") shape. This type of channel, then, utilizes both electrons as well as holes to transfer electrical charge across its channel.

When working with ZDX130N50, one should consider the power rating of the device, as it needs to be compatible with the application that is being used. It is rated for a drain current of 130 amperes and a peak (voltage) rating of 50 volts. Additionally, the total gate charge is 26 nano C and its thermal resistance (Junction-ambient) rating is 120˚C/W.

The application field of the ZDX130N50 is quite extensive. It can be used in power supplies, automotive electronics, motor control systems, audio amplifiers, and much more. The advantages of using this device are that it has a relatively low power consumption, a high current transfer performance and low gate losses.

To understand the ZDX130N50 working principle, we will look at what happens when the MOSFET is powered up. As soon as the power is switched on, the voltage or current will pass through the source and drain leads, depending on whether it is a positive or a negative voltage. This voltage then loots the electrons and holes that are stored in the the gate region, and causes them to move across the channel, allowing current to flow.

When the power is switched off, on the other hand, the charge at the gate will then be depleted, preventing the current from flowing through the channel. This, in summary, is the working principle of the MOSFET ZDX130N50.

The specific data is subject to PDF, and the above content is for reference

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