Allicdata Part #: | ZTX788BSTZ-ND |
Manufacturer Part#: |
ZTX788BSTZ |
Price: | $ 0.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 15V 3A E-LINE |
More Detail: | Bipolar (BJT) Transistor PNP 15V 3A 100MHz 1W Thro... |
DataSheet: | ZTX788BSTZ Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.31143 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Vce Saturation (Max) @ Ib, Ic: | 450mV @ 10mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 500 @ 10mA, 2V |
Power - Max: | 1W |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | E-Line-3, Formed Leads |
Supplier Device Package: | E-Line (TO-92 compatible) |
Base Part Number: | ZTX788B |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
ZTX788BSTZ is a silicon planar medium power NPN transistor mounted in a TO-220 plastic package. It is designed for switching and linear applications up to 4A. It can be used as a general-purpose amplifier in audio frequency, industrial, commercial and automotive field.
The ZTX788BSTZ is designed to provide a low collector-to-base leakage current and a low collector-emitter leakage current, while still providing fast switching times. The principle on which it works is simple; the base is provided with a current that is proportional to the base-emitter voltage. As a result, the current flowing in the collector is proportional to the current in the base.
The main components of the ZTX788BSTZ are the transistor, collector, base, and emitter. The transistor is a three-terminal electronic device that acts as a switch or amplifier when connected between the source and output of a circuit. The collector is the electrical connection between the base and the emitter. It collects the electrons released by the base and allows them to pass through to the emitter. The base is the connection between the collector and the emitter. It provides the control current that causes the collector current to change, in turn causing the emitter current to change.
The ZTX788BSTZ has a high gain-bandwidth product and high voltage rating, making it an excellent choice for use in applications requiring fast-switching and high power rating capabilities. It is also well-suited for use in applications that require effective linear amplification and improved performance when compared to other low-power bipolar transistors.
The ZTX788BSTZ is a single bipolar transistor, meaning that it is constructed from two distinct pieces. It can be used for linear and switching applications, meaning it can be used in audio, motor control, or sensor applications. It has a low voltage drop-off and high currents, which make it ideal for both high and low frequency applications.
In conclusion, the ZTX788BSTZ is a silicon planar medium power NPN transistor mounted in a TO-220 plastic package. It is an excellent choice for applications requiring fast-switching and high power rating capabilities. It is well-suited for use in applications requiring effective linear amplification, and can be used in both high and low frequency applications.
The specific data is subject to PDF, and the above content is for reference
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