ZTX755STOB Allicdata Electronics
Allicdata Part #:

ZTX755STOB-ND

Manufacturer Part#:

ZTX755STOB

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 150V 1A E-LINE
More Detail: Bipolar (BJT) Transistor PNP 150V 1A 30MHz 1W Thro...
DataSheet: ZTX755STOB datasheetZTX755STOB Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 5V
Power - Max: 1W
Frequency - Transition: 30MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)
Base Part Number: ZTX755
Description

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The ZTX755STOB is a NPN silicon epitaxial transistor, which is commonly used in different applications including amplifier, switch, oscillator and other applications. It is also classified as a single bipolar transistor (BJT) type transistor.

The ZTX755STOB is made with double polysilicon and has an absolute maximum power dissipation of 1W at 25°C. It also has a maximum collector current rating of 800mA and a maximum voltage collector-emitter of 60V. It is also capable of a maximum frequency of 1Mhz and has a low noise current gain of 100.

The ZTX755STOB is typically used in audio-visual equipment, such as amplifiers, oscillators and so on. It is also used in other equipment types, such as high-frequency switching drivers, low-power amplifiers, video output circuits and many others.

In terms of its operation, the ZTX755STOB works based on the classic BJT operation. That is, the base current is varied by a small current, which increases or decreases the collector current. This then produces an output voltage across the load that is proportional to the input current.

Another benefit of the ZTX755STOB is its high switching speed. This makes it great for applications that require faster switching or when the circuit requires high switching speed. As a result, it can be used in circuits where switching speed is an important factor.

The ZTX755STOB is also capable of operating with a good thermal stability. This is due to its high heatsink area and its low thermal resistance. This ensures that the transistor operates consistently and with a stable output voltage.

In terms of its construction, the ZTX755STOB is constructed with a silicon epitaxial base. This means that it has a much better thermal and electrical stability than other types of transistors. This makes it ideal for applications that require reliable operation over a long period of time.

The ZTX755STOB also has a high breakdown voltage of 70 V, making it suitable for use in circuits that require higher voltage levels. In addition, it offers a relatively low input capacitance of 5 pF, making it ideal for use in applications that require low power consumption.

In conclusion, the ZTX755STOB is a popular single, bipolar transistor for various applications, including amplifier and switch circuits. It is made of silicon epitaxial base and has a good thermal and electrical stability. It is capable of operating with high switching speeds and offers a relatively low input capacitance of 5 pF. This makes it an ideal choice for low-power applications and when a high degree of thermal stability is required.

The specific data is subject to PDF, and the above content is for reference

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