ZTX749_D27Z

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	25V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 200mA, 2A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1A, 2V
Power - Max:	1W
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-226
Base Part Number:	ZTX749

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to the ZTX749_D27Z

The ZTX749_D27Z is a type of transistor known as a bipolar junction transistor (BJT) which falls within the single category. This transistor is a commonly used voltage-controlled current source for medium power amplifying and switching applications.

What is a Bipolar Junction Transistor (BJT)?

A bipolar junction transistor, or BJT, is an electronic device made of three differently doped semiconductor layers, which can be used as an electronic switch to amplify, oscillate and/or switch electric signals in circuits. It consists of two p-type layers between two n-type layers, forming three semiconductor junction layers. The common ‘base’ layer is connected to the third ‘collector’ layer via a wire, and the base layer is connected to the second ‘emitter’ layer. The BJT is bidirectional, meaning that both p- and n-type material layers form p-n junctions. When a voltage is applied to the base layer, this creates an electric field across the junction layers of the BJT, allowing current to flow between the collector and emitter layers.

Technical Specifications of the ZTX749_D27Z

The ZTX749_D27Z is a single BJT transistor with a maximum collector current of 250mA, a voltage rating of 55V, and a maximum power dissipation of 2.0W. It is available in a variety of packages, including the TO-126, TO-92 and SOT-23. It is capable of operating between -40°C to +125°C, and has a wide range of uses in switching and amplifier applications.

Understanding the ZTX749_D27Z Application Field and Working Principle

Due to its high current, voltage and power ratings, the ZTX749_D27Z is an ideal choice for amplifier and switching applications. It is commonly used to provide bipolar amplification, which is achieved by applying a voltage across one of the transistor’s three layers. This generates an electric field which causes a current to flow between the collector and emitter layers, and the transistor acts as an amplifier by increasing this current’s magnitude.The ZTX749_D27Z is also used as a switch in its common emitter configuration. It is often used in circuits to route and control current, as it can open or close quickly when the voltage across its base layer is increased or decreased. When the base voltage is increased, the transistor increases the current flow between its collector and emitter layers. Conversely, when the base voltage is decreased, the transistor decreases the current flow between its collector and emitter layers.

Conclusion

The ZTX749_D27Z is a versatile single BJT transistor with a variety of uses in switching and amplification applications. It features a maximum collector current of 250mA and voltage rating of 55V, and can function over an operating range of -40°C to +125°C. It is often used in circuits to control and route current, as it can open or close quickly when the voltage across its base layer changes.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description