ZTX790ASTZ

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The ZTX790ASTZ, also known as the silicon mesa high voltage transistor, is a distinguished member of the Transistors - Bipolar (BJT) - Single family, with remarkable features and great usability. This device offers high current gain, high voltage, and offers low noise operation. Furthermore, it is packed in an attractive plastic TO-92 package, making it extremely attractive for those looking for an efficient piece of tech.

This device is particularly well-suited for use in circuits that need high voltage, fast dynamic response and low saturation voltage. It has a very high current gain, and is capable of switching up to about 200V. In addition, it has excellent thermal stability and is also quite resistant to avalanche breakdown.

In terms of its temperature operating range, the ZTX790ASTZ can function properly between -55 to +125 °C. Furthermore, its forward current gain is typically at least 1.7A with a Collector-Emitter Voltage of 12V, and its Collector-Emitter breakdown voltage is typically 90V.

The ZTX790ASTZ is designed to work as an amplifier and switch in a variety of applications. This device is an ideal candidate for use in automotive, audio and RF amplifiers, as well as DC to DC converters and motor drive applications. Moreover, it is also efficient enough to be used in power supplies, LED lighting, regulated power supply circuits and industrial circuit boards.

The working principle of the ZTX790ASTZ revolves around the concept of bipolar junction transistors. It relies on the current flowing through a semiconductor medium to control current flowing through another. This semiconductor core is made up of three regions called the Base, Collector, and Emitter. The Base is where current from a voltage source enters. Then, the current from the Base move through the Collector and the Emitter, where the majority of current output occurs.

The current flowing through the ZTX790ASTZ Collector-Emitter junction is controlled by the amount of current flowing through the Base. From this, it follows that the more current that is driven into the Base the larger the Collector and Emitter currents will be. This form of control is often called voltage gain, providing the device with its amplifier properties.

Moreover, when the current through the Collector-Emitter junction reaches a certain value, the device tends to enter into a region of saturation. In this state, the current through the device has ceased to increase even though large amounts of voltage are present. This feature gives the device its switching characteristics.

All the abovementioned characteristics highlight why the ZTX790ASTZ is renowned for its versatility, efficiency and performance. With these features, it is no surprise that this device is one of the most popular transistors used in industrial and automobile applications. As such, this remarkable member of the Transistors - Bipolar (BJT) - Single family will continue to play a crucial role in helping to improve the performance of a variety of circuits.

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