Allicdata Part #: | ZVN1409ASTOB-ND |
Manufacturer Part#: |
ZVN1409ASTOB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 90V 0.01A TO92-3 |
More Detail: | N-Channel 90V 10mA (Ta) 625mW (Ta) Through Hole E-... |
DataSheet: | ZVN1409ASTOB Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 90V |
Current - Continuous Drain (Id) @ 25°C: | 10mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 250 Ohm @ 5mA, 10V |
Vgs(th) (Max) @ Id: | 2.4V @ 100µA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6.5pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 625mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | E-Line (TO-92 compatible) |
Package / Case: | E-Line-3 |
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The ZVN1409ASTOB MOSFET is an enhancement mode MOSFET (metal-oxide-semiconductor field-effect transistor). This device is intended as an alternative to the standard MOSFET. It is designed to offer superior performance over the regular MOSFETs.
In general, the ZVN1409ASTOB is a single FET that has a low on-state resistance and low gate-threshold voltage. This makes it ideal for applications that require low-power or high-speed switching. It is also capable of operating at very high voltages, making it suitable for use in a wide range of applications.
The ZVN1409ASTOB has a variety of application fields. It can be used in a wide range of circuit designs, including power management, analog and digital converters, audio amplifier circuits, RF and microwave circuits, power supplies and current mirroring. It can also be used in low-power applications such as switch-mode power supplies and battery chargers.
The ZVN1409ASTOB has a number of important features that make it suitable for a variety of application fields. Its wide voltage operating range makes it suitable for a wide range of circuit designs, from low-power switch-mode power supplies to high-power analog and digital converters. It also has a low gate-threshold voltage, which helps to reduce power consumption when the device is in operation.
The ZVN1409ASTOB is a single FET and the working principle of the device is based on the interaction between the gate oxide and the drain. When a gate voltage is applied, the channel of the FET is opened, allowing current to flow between the source and drain. The drain current is controlled by the gate voltage, which causes the voltage drop across the source and drain to be reduced. This, in turn, causes the device to switch on and off and thus, allows the flow of current in the circuit.
The ZVN1409ASTOB is widely used in applications such as power management, audio amplification, and wireless communication. It is also suitable for a variety of circuit designs, making it a versatile device. It is often used in power management due to its low on-state resistance and low gate-threshold voltage. It is also commonly used in audio amplifiers and RF/microwave applications, due to its ability to operate at high voltages.
In summary, the ZVN1409ASTOB is an enhancement mode MOSFET that is designed to offer superior performance over the standard MOSFET. Its low on-state resistance and low gate-threshold voltage make it suitable for low-power or high-speed switching applications. It is also capable of operating at very high voltages and is suitable for a wide range of applications, including power management, audio amplifiers, and RF/microwave circuits. Its features make it ideal for a variety of circuit designs and is thus, a very versatile device.
The specific data is subject to PDF, and the above content is for reference
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