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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
BGS22WL10E6327X TSA1TR-ND	BGS22WL10E6327X TSA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy RF Type: General Purpose Topology: Reflective Circuit: DPDT Frequency Range: 100MHz ~ 3GHz Isolation: 24dB Insertion Loss: 0.45dB Test Frequency: 2.69GHz Impedance: 50 Ohm Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -30C ~ 85C Package / Case: 10-XFQFN Supplier Device Package: TSLP-10-1	1000 Order	7500+: $0.133
BGT24MTR12E6327 XUMA1TR-ND	BGT24MTR12E6327 XUMA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active Function: Transceiver Frequency: 24GHz ~ 24.25GHz RF Type: General Purpose Package / Case: 32-VFQFN Exposed Pad Supplier Device Package: 32-VQFN (5.5x4.5)	3000 Order	1000+: $6.6571
BGA622E6820HTSA 1TR-ND	BGA622E6820HTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Frequency: 500MHz ~ 6GHz P1dB: -16.5dBm Gain: 15dB Noise Figure: 1dB RF Type: Cellular, GSM, DCS, PCS, UMTS, ISM, WLAN, WLL Voltage - Supply: 3.5V Current - Supply: 10mA Test Frequency: 1.575GHz Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	1000 Order	1+: $0
PVT322S-ND	PVT322S	Infineon Technologies	View more Series: PVT, HEXFET Packaging: Tube Part Status: Obsolete Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) x 2 Output Type: AC, DC Voltage - Input: 1.2VDC Voltage - Load: 0V ~ 250V Load Current: 170mA On-State Resistance (Max): 10 Ohms Termination Style: Gull Wing Package / Case: 8-SMD (0.300", 7.62mm) Supplier Device Package: 8-SMT	1000 Order	--
TLV49613MXTSA1- ND	TLV49613MXTSA1	Infineon Technologies	View more Series: TLV Packaging: Tape & Reel (TR) Part Status: Active Function: Latch Technology: Hall Effect Polarization: South Pole Sensing Range: 7.5mT Trip, -7.5mT Release Test Condition: 25C Voltage - Supply: 3 V ~ 26 V Current - Supply (Max): 2.5mA Current - Output (Max): 25mA Output Type: Open Drain Features: Temperature Compensated Operating Temperature: -40C ~ 125C (TA) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3-15	1000 Order	3000+: $0.1861
TLV49681TAXBXA1 -ND	TLV49681TAXBXA1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	4000+: $0.2364
ICE3AR0680VJZXK LA1-ND	ICE3AR0680VJZXK LA1	Infineon Technologies	View more Series: CoolMOS, CoolSETF3R Packaging: Tube Part Status: Active Output Isolation: Isolated Internal Switch(s): Yes Voltage - Breakdown: 800V Topology: Flyback Voltage - Start Up: 17V Voltage - Supply (Vcc/Vdd): 10.5 V ~ 27 V Duty Cycle: 75% Frequency - Switching: 100kHz Power (Watts): 82W Fault Protection: Over Load, Over Temperature, Over Voltage Operating Temperature: -40C ~ 150C (TJ) Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Supplier Device Package: PG-DIP-7 Mounting Type: Through Hole	2563 Order	1+: $1.9404 10+: $1.7426 100+: $1.4006 500+: $1.1507 1000+: $0.9534
IFCM10S60GDXKMA 1-ND	IFCM10S60GDXKMA 1	Infineon Technologies	View more Series: CIPOS Part Status: Active Type: IGBT Configuration: 3 Phase Inverter Current: 30A Voltage: 650V Voltage - Isolation: 2000Vrms Package / Case: 24-PowerDIP Module (1.028", 26.10mm)	280 Order	1+: $10.1178 10+: $9.2982 280+: $7.4672
IKCM20R60GDXKMA 1-ND	IKCM20R60GDXKMA 1	Infineon Technologies	View more Series: CIPOS Part Status: Active Type: IGBT Configuration: 2 Phase Current: 20A Voltage: 600V Voltage - Isolation: 2000Vrms Package / Case: 24-PowerDIP Module (1.028", 26.10mm)	268 Order	1+: $11.5164 10+: $10.5846 280+: $8.5008
IRF7324-ND	IRF7324	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 9A Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 63nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 15V Power - Max: 2W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	1000 Order	1+: $0
IKW30N65EL5XKSA 1IN-ND	IKW30N65EL5XKSA 1	Infineon Technologies	View more Series: TrenchStop 5 Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A Power - Max: 227W Switching Energy: 470J (on), 1.35mJ (off) Input Type: Standard Gate Charge: 168nC Td (on/off) @ 25C: 33ns/308ns Test Condition: 400V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	397 Order	1+: $3.4776 10+: $3.1235 100+: $2.5591 500+: $2.1785 1000+: $1.8373
IRF520NPBF-ND	IRF520NPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 9.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 200 mOhm @ 5.7A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Power Dissipation (Max): 48W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	2519 Order	--
IKW50N60H3FKSA1 -ND	IKW50N60H3FKSA1	Infineon Technologies	View more Series: TrenchStop Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A Power - Max: 333W Switching Energy: 2.36mJ Input Type: Standard Gate Charge: 315nC Td (on/off) @ 25C: 23ns/235ns Test Condition: 400V, 50A, 7 Ohm, 15V Reverse Recovery Time (trr): 130ns Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	1000 Order	--
IRGB20B60PD1PBF -ND	IRGB20B60PD1PBF	Infineon Technologies	View more Packaging: Tube Lead Free Status: Lead free RoHS Status: RoHS Compliant Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Not For New Designs Moisture Sensitivity Level (MSL): 1 (Unlimited) IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A Power - Max: 215W Switching Energy: 95J (on), 100J (off) Input Type: Standard Gate Charge: 68nC Td (on/off) @ 25C: 20ns/115ns Test Condition: 390V, 13A, 10 Ohm, 15V Operating Temperature: -55C ~ 150C (TJ) Reverse Recovery Time (trr): 28ns Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	8750 Order	--
BSL306NL6327HTS A1TR-ND	BSL306NL6327HTS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 2.3A Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id: 2V @ 11A Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V Power - Max: 500mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6 Base Part Number: BSL306	1000 Order	1+: $0
BCW68GE6327HTSA 1TR-ND	BCW68GE6327HTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 330mW Frequency - Transition: 200MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: BCW68	1000 Order	42000+: $0.0197
AIKQ100N60CTXKS A1-ND	AIKQ100N60CTXKS A1	Infineon Technologies	View more Series: Automotive, AEC-Q101, TrenchStop Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant IGBT Type: Trench Field Stop Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 160A Current - Collector Pulsed (Icm): 400A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A Power - Max: 714W Switching Energy: 3.1mJ (on), 2.5mJ (off) Input Type: Standard Gate Charge: 610nC Td (on/off) @ 25C: 30ns/290ns Test Condition: 400V, 100A, 3.6 Ohm, 15V Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-46	1000 Order	1+: $7.3647 10+: $6.7656 100+: $5.714 500+: $5.0831
IRGR2B60KDPBF-N D	IRGR2B60KDPBF	Infineon Technologies	View more Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Last Time Buy Moisture Sensitivity Level (MSL): 1 (Unlimited) IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 6.3A Current - Collector Pulsed (Icm): 8A Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A Power - Max: 35W Switching Energy: 74J (on), 39J (off) Input Type: Standard Gate Charge: 12nC Td (on/off) @ 25C: 11ns/150ns Test Condition: 400V, 2A, 100 Ohm, 15V Reverse Recovery Time (trr): 68ns Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Base Part Number: IRGR2B60	1000 Order	3000+: $0.5342
IPA60R600P7XKSA 1-ND	IPA60R600P7XKSA 1	Infineon Technologies	View more Series: CoolMOS P7 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 1.7A, 10V Vgs(th) (Max) @ Id: 4V @ 80A Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 363pF @ 400V Power Dissipation (Max): 21W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	376 Order	1+: $1.1277 10+: $0.9986 100+: $0.7893 500+: $0.6121 1000+: $0.4833
SPP07N60C3XKSA1 -ND	SPP07N60C3XKSA1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V Vgs(th) (Max) @ Id: 3.9V @ 350A Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Power Dissipation (Max): 83W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	455 Order	1+: $1.6821 10+: $1.5208 100+: $1.222 500+: $0.9504 1000+: $0.7875
BC817-25B5003IN TR-ND	BC 817-25 B5003	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 330mW Frequency - Transition: 170MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: BC817	1000 Order	1+: $0
IRG4PC30WPBF-ND	IRG4PC30WPBF	Infineon Technologies	View more Packaging: Bulk Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Last Time Buy Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 92A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Power - Max: 100W Switching Energy: 130J (on), 130J (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25C: 25ns/99ns Test Condition: 480V, 12A, 23 Ohm, 15V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	1000 Order	400+: $1.34
IPB60R099P7ATMA 1TR-ND	IPB60R099P7ATMA 1	Infineon Technologies	View more Series: CoolMOS P7 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 99 mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id: 4V @ 530A Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1952pF @ 400V Power Dissipation (Max): 117W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $1.6781
IRLML2502TRPBFT R-ND	IRLML2502TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.2A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 15V Power Dissipation (Max): 1.25W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro3/SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
IPP65R045C7XKSA 1-ND	IPP65R045C7XKSA 1	Infineon Technologies	View more Series: CoolMOS C7 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.9A, 10V Vgs(th) (Max) @ Id: 4V @ 1.25mA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 400V Power Dissipation (Max): 227W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $8.3349 10+: $7.5751 100+: $6.439 500+: $5.4922
BSP298H6327XUSA 1TR-ND	BSP298H6327XUSA 1	Infineon Technologies	View more Series: SIPMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55C ~ 150C (TJ) Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	1000 Order	1000+: $0.3939
BSP324H6327XTSA 1TR-ND	BSP324H6327XTSA 1	Infineon Technologies	View more Series: SIPMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25 Ohm @ 170mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 94A Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 154pF @ 25V Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	1000 Order	1000+: $0.1968
IPD60R180P7SAUM A1TR-ND	IPD60R180P7SAUM A1	Infineon Technologies	View more Series: CoolMOS P7 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180 mOhm @ 5.6A, 10V Vgs(th) (Max) @ Id: 4V @ 280A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 400V Power Dissipation (Max): 72W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	2500 Order	--
IRF9392TRPBF-ND	IRF9392TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 9.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V, 20V Rds On (Max) @ Id, Vgs: 12.1 mOhm @ 7.8A, 20V Vgs(th) (Max) @ Id: 2.4V @ 25A Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 25V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
BSZ099N06LS5ATM A1-ND	BSZ099N06LS5ATM A1	Infineon Technologies	View more Series: * Packaging: Tape & Reel (TR) Part Status: Active Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	7 Order	--
IRFR3709ZTRLPBF -ND	IRFR3709ZTRLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 86A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.25V @ 250A Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 15V Power Dissipation (Max): 79W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	3000+: $0.2495
IPI70R950CEXKSA 1-ND	IPI70R950CEXKSA 1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	500+: $0.3451
IRG4BC30K-ND	IRG4BC30K	Infineon Technologies	View more Packaging: Tube Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): 58A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A Power - Max: 100W Switching Energy: 360J (on), 510J (off) Input Type: Standard Gate Charge: 67nC Td (on/off) @ 25C: 26ns/130ns Test Condition: 480V, 16A, 23 Ohm, 15V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	1000 Order	--
IRG4BC30KD-STRR -ND	IRG4BC30KD-STRR	Infineon Technologies	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): 58A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A Power - Max: 100W Switching Energy: 600J (on), 580J (off) Input Type: Standard Gate Charge: 67nC Td (on/off) @ 25C: 60ns/160ns Test Condition: 480V, 16A, 23 Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	1000 Order	--
IRLML2803CT-ND	IRLML2803TR	Infineon Technologies	View more Series: HEXFET Packaging: Cut Tape (CT) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 1.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 250 mOhm @ 910mA, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 25V Power Dissipation (Max): 540mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro3/SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
IRFZ44ESTRL-ND	IRFZ44ESTRL	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 23 mOhm @ 29A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 25V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IRFU3704-ND	IRFU3704	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1996pF @ 10V Power Dissipation (Max): 90W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	--
IRF5803D2TR-ND	IRF5803D2TR	Infineon Technologies	View more Series: FETKY Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 25V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
IRFR2407TR-ND	IRFR2407TR	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 26 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
SPP07N60S5IN-ND	SPP07N60S5	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V Vgs(th) (Max) @ Id: 5.5V @ 350A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 25V Power Dissipation (Max): 83W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	1000 Order	--

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