![IRLML2502TRPBF Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | IRLML2502TRPBFTR-ND |
Manufacturer Part#: |
IRLML2502TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 4.2A SOT-23 |
More Detail: | N-Channel 20V 4.2A (Ta) 1.25W (Ta) Surface Mount M... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | Micro3™/SOT-23 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.25W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 740pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 4.2A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.2A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRLML2502TRPBF is an advanced technology, low voltage, high speed triple insulated gate FET that belongs to a family of high-proficiency, low power, dual N-Channel MOSFET used in an array of electronic based applications. This charge-voltage MOSFET has been designed especially for low input-voltage applications such as mobile devices and advanced chip technologies.
The main features of the IRLML2502TRPBF include high-speed switching capability as a result of positive-charge threshold voltage; internal soft start; maximum drain source voltage of 15V; and extremely low on-resistance. At high temperatures, these devices will support 15V drain to source voltage, and an RDS(on) of just 0.007 Ohms. As temperature decreases, these devices will maintain a maximum drain voltage of 60V and RDS(on) of 0.0060 Ohms.
The device’s unique design also ensures that it has guarded against noise issues, preventing performance degradation caused by electromagnetic interference and other high-interferential environments. Furthermore, the IRLML2502TRPBF has been designed with a reinforced gate-oxide construction, ensuring maximum durability to the device.
The IRLML2502TRPBF is ideal for use in a variety of applications such as low voltage AC/DC supplies, switching regulators, note-book computers, DC to DC converters, and many industrial devices. Additionally, this device is also commonly used as a high speed, low voltage switching load in consumer electronics; in particular, battery-powered consumer electronics such as cell phones and personal digital assistants.
The IRLML2502TRPBF’s working principle is based on a basic field-effect transistor structure. The device consists of a source, a drain, a channel and a gate. An electric field is generated when a voltage is applied between the gate and the source; this in turn affects the flow of electrons through the channel section between the source and the drain. As the voltage on the gate increases to a certain point, the flow of electrons through the device is controlled.
In short, the IRLML2502TRPBF is an excellent choice for low voltage, high speed applications and is quickly becoming an industry standard. With its unique design and powerful performance, the IRLML2502TRPBF will continue to be an important component in a variety of electronic based applications.
The specific data is subject to PDF, and the above content is for reference
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