IPB60R099P7ATMA1

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IPB60R099P7ATMA1 Application Field and Working Principle

The IPB60R099P7ATMA1 belongs to a popular category of transistors known as Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). These devices are available in a variety of shapes, sizes and configurations depending upon the application and require varying amounts of current and wire connections. The IPB60R099P7ATMA1 is classified as an N-channel Enhancement mode MOSFET, more commonly known as an EnFET.

Benefits of an EnFET

One of the most significant benefits of an EnFET is its ability to effectively control the amount of power being fed to a device. Unlike most other types of transistors, which rely on the amount of resistance applied to the device, the EnFET utilizes a special type of gate oxide that can be employed to reduce the amount of current flowing through the device. This makes the EnFET an ideal solution for many types of power control applications.

Features and Specifications of the IPB60R099P7ATMA1

The IPB60R099P7ATMA1 MOSFET has a maximum current rating of 28A at 8V, a breakdown voltage of 99V, and a maximum drain-source on-state resistance of 0.03ohms. The device has an average gate charge of 63nC at 10V and a gate threshold voltage of 4V. It also features a drain-source breakdown voltage temperature coefficient of -2mV/�C and is rated for a maximum junction temperature of 150�C.

Applications for the IPB60R099P7ATMA1

The IPB60R099P7ATMA1 EnFET is an effective solution for providing efficient and reliable power control. It is commonly used in applications such as power inverters, solar panels, medical equipment, HVAC systems and industrial machinery. The device has a fast switching speed and is suitable for use in both AC and DC circuits. It is also able to provide exceptional protection from power surges, allowing it to be used in most types of power control applications.

Working Principle of the IPB60R099P7ATMA1

The working principle of the IPB60R099P7ATMA1 is based on the concept of a field effect. This works by creating an electric field around the device which can be used to control the flow of current through the device. When a voltage is applied to the gate, the electric field will induce a change in the conductivity of the device. When the voltage is lowered, the conductivity is reduced, and when the voltage is increased, the conductivity is increased. This allows the device to be used to control the power being applied to a device.

In summary, the IPB60R099P7ATMA1 EnFET is a reliable and efficient power controlling device. Its unique design allows it to effectively control the amount of current flowing through the device, and its fast switching speed makes it suitable for a wide range of applications. The device is capable of providing exceptional protection from power surges, and its average gate charge is low, making it an ideal solution for power control applications.

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